TY  - JOUR
AU  - Stanković, S. J.
AU  - Ilić, Radovan D.
AU  - Janković, K. S.
AU  - Vasić-Milovanović, Aleksandra
AU  - Lončar, B.
PY  - 2011
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1226
AB  - This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.
PB  - Polish Acad Sciences Inst Physics, Warsaw
T2  - Acta Physica Polonica A
T1  - Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo
EP  - 255
IS  - 2
SP  - 252
VL  - 120
DO  - 10.12693/APhysPolA.120.252
ER  - 

@article{
author = "Stanković, S. J. and Ilić, Radovan D. and Janković, K. S. and Vasić-Milovanović, Aleksandra and Lončar, B.",
year = "2011",
abstract = "This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.",
publisher = "Polish Acad Sciences Inst Physics, Warsaw",
journal = "Acta Physica Polonica A",
title = "Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo",
pages = "255-252",
number = "2",
volume = "120",
doi = "10.12693/APhysPolA.120.252"
}

Stanković, S. J., Ilić, R. D., Janković, K. S., Vasić-Milovanović, A.,& Lončar, B.. (2011). Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo. in Acta Physica Polonica A
Polish Acad Sciences Inst Physics, Warsaw., 120(2), 252-255.
https://doi.org/10.12693/APhysPolA.120.252

Stanković SJ, Ilić RD, Janković KS, Vasić-Milovanović A, Lončar B. Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo. in Acta Physica Polonica A. 2011;120(2):252-255.
doi:10.12693/APhysPolA.120.252 .

Stanković, S. J., Ilić, Radovan D., Janković, K. S., Vasić-Milovanović, Aleksandra, Lončar, B., "Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo" in Acta Physica Polonica A, 120, no. 2 (2011):252-255,
https://doi.org/10.12693/APhysPolA.120.252 . .

TY  - JOUR
AU  - Lončar, B.
AU  - Osmokrović, Predrag
AU  - Vujisić, Miloš
AU  - Vasić, Aleksandra
PY  - 2007
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/684
AB  - The aim of this paper is to examine the influence of temperature raising, as well as neutron and gamma irradiation on the dissipation factor (loss tangent, tg delta) and capacitance (C) of capacitors with polycarbonate dielectric. Operation of capacitors subject to extreme conditions, such as high temperature and in the presence of ionizing radiation fields, is of special concern in military industry and space technology. The obtained results show that the rise of temperature has a considerable influence on the loss tangent of these capacitors, while exposure to a mixed neutron and gamma radiation field causes a decrease of their capacitance.
PB  - National Institute of Optoelectronics
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Temperature and radiation hardness of polycarbonate capacitors
EP  - 2866
IS  - 9
SP  - 2863
VL  - 9
UR  - https://hdl.handle.net/21.15107/rcub_machinery_684
ER  - 

@article{
author = "Lončar, B. and Osmokrović, Predrag and Vujisić, Miloš and Vasić, Aleksandra",
year = "2007",
abstract = "The aim of this paper is to examine the influence of temperature raising, as well as neutron and gamma irradiation on the dissipation factor (loss tangent, tg delta) and capacitance (C) of capacitors with polycarbonate dielectric. Operation of capacitors subject to extreme conditions, such as high temperature and in the presence of ionizing radiation fields, is of special concern in military industry and space technology. The obtained results show that the rise of temperature has a considerable influence on the loss tangent of these capacitors, while exposure to a mixed neutron and gamma radiation field causes a decrease of their capacitance.",
publisher = "National Institute of Optoelectronics",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Temperature and radiation hardness of polycarbonate capacitors",
pages = "2866-2863",
number = "9",
volume = "9",
url = "https://hdl.handle.net/21.15107/rcub_machinery_684"
}

Lončar, B., Osmokrović, P., Vujisić, M.,& Vasić, A.. (2007). Temperature and radiation hardness of polycarbonate capacitors. in Journal of Optoelectronics and Advanced Materials
National Institute of Optoelectronics., 9(9), 2863-2866.
https://hdl.handle.net/21.15107/rcub_machinery_684

Lončar B, Osmokrović P, Vujisić M, Vasić A. Temperature and radiation hardness of polycarbonate capacitors. in Journal of Optoelectronics and Advanced Materials. 2007;9(9):2863-2866.
https://hdl.handle.net/21.15107/rcub_machinery_684 .

Lončar, B., Osmokrović, Predrag, Vujisić, Miloš, Vasić, Aleksandra, "Temperature and radiation hardness of polycarbonate capacitors" in Journal of Optoelectronics and Advanced Materials, 9, no. 9 (2007):2863-2866,
https://hdl.handle.net/21.15107/rcub_machinery_684 .

TY  - CONF
AU  - Stanković, Sj
AU  - Petrović, M.
AU  - Kovacević, M.
AU  - Vasić, Aleksandra
AU  - Osmokrović, Predrag
AU  - Lončar, B.
PY  - 2007
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/681
AB  - CdZnTe detectors have been employed in diagnostic X-ray spectroscopy. This paper presents the Monte Carlo calculation of X-ray deposited energy in a CdZnTe detector for different energies of photon beam. In incident photon direction, the distribution of absorbed dose as deposited energy in detector is determined, Based on the dependence of the detector response on the thickness and different Zn fractions, some conclusions about changes of the material characteristics could be drawn. Results of numerical simulation suggest that the CdZnTe detector could be suitable for X-ray low energy.
PB  - Trans Tech Publications Ltd
C3  - Materials Science Forum
T1  - Monte Carlo calculation of x-rays deposited energy in CdZnTe detector
EP  - 146
SP  - 141
VL  - 555
DO  - 10.4028/0-87849-441-3.141
ER  - 

@conference{
author = "Stanković, Sj and Petrović, M. and Kovacević, M. and Vasić, Aleksandra and Osmokrović, Predrag and Lončar, B.",
year = "2007",
abstract = "CdZnTe detectors have been employed in diagnostic X-ray spectroscopy. This paper presents the Monte Carlo calculation of X-ray deposited energy in a CdZnTe detector for different energies of photon beam. In incident photon direction, the distribution of absorbed dose as deposited energy in detector is determined, Based on the dependence of the detector response on the thickness and different Zn fractions, some conclusions about changes of the material characteristics could be drawn. Results of numerical simulation suggest that the CdZnTe detector could be suitable for X-ray low energy.",
publisher = "Trans Tech Publications Ltd",
journal = "Materials Science Forum",
title = "Monte Carlo calculation of x-rays deposited energy in CdZnTe detector",
pages = "146-141",
volume = "555",
doi = "10.4028/0-87849-441-3.141"
}

Stanković, S., Petrović, M., Kovacević, M., Vasić, A., Osmokrović, P.,& Lončar, B.. (2007). Monte Carlo calculation of x-rays deposited energy in CdZnTe detector. in Materials Science Forum
Trans Tech Publications Ltd., 555, 141-146.
https://doi.org/10.4028/0-87849-441-3.141

Stanković S, Petrović M, Kovacević M, Vasić A, Osmokrović P, Lončar B. Monte Carlo calculation of x-rays deposited energy in CdZnTe detector. in Materials Science Forum. 2007;555:141-146.
doi:10.4028/0-87849-441-3.141 .

Stanković, Sj, Petrović, M., Kovacević, M., Vasić, Aleksandra, Osmokrović, Predrag, Lončar, B., "Monte Carlo calculation of x-rays deposited energy in CdZnTe detector" in Materials Science Forum, 555 (2007):141-146,
https://doi.org/10.4028/0-87849-441-3.141 . .

TY  - CONF
AU  - Vasić, Aleksandra
AU  - Vujisić, Miloš
AU  - Lončar, B.
AU  - Osmokrović, Predrag
PY  - 2007
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/667
AB  - Rapid development and wide application of photovoltaic (PV) solar systems are primarily based on thorough investigations of the characteristics of solar cells. Though proved to be relatively stable (except perhaps amorphous silicon solar cells) under ordinary working conditions, solar systems are (like any other electronic devices) prone to the effects of aging, which could deteriorate their characteristics. The aim of this paper is to investigate the influence of aging on the main characteristics of solar cells such as efficiency, fill factor, short circuit current etc. To simulate and accelerate the effects of aging, solar cells were exposed to the radiation fields of different doses. Investigations were directed to the effects of defects and impurities that influence the minority carrier lifetime, better understanding of transport properties, electron-hole pair creation etc., that would ultimately lead to larger scale application of solar energy in the near future.
PB  - National Institute of Optoelectronics
C3  - Journal of Optoelectronics and Advanced Materials
T1  - Aging of solar cells under working conditions
EP  - 1846
IS  - 6
SP  - 1843
VL  - 9
UR  - https://hdl.handle.net/21.15107/rcub_machinery_667
ER  - 

@conference{
author = "Vasić, Aleksandra and Vujisić, Miloš and Lončar, B. and Osmokrović, Predrag",
year = "2007",
abstract = "Rapid development and wide application of photovoltaic (PV) solar systems are primarily based on thorough investigations of the characteristics of solar cells. Though proved to be relatively stable (except perhaps amorphous silicon solar cells) under ordinary working conditions, solar systems are (like any other electronic devices) prone to the effects of aging, which could deteriorate their characteristics. The aim of this paper is to investigate the influence of aging on the main characteristics of solar cells such as efficiency, fill factor, short circuit current etc. To simulate and accelerate the effects of aging, solar cells were exposed to the radiation fields of different doses. Investigations were directed to the effects of defects and impurities that influence the minority carrier lifetime, better understanding of transport properties, electron-hole pair creation etc., that would ultimately lead to larger scale application of solar energy in the near future.",
publisher = "National Institute of Optoelectronics",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Aging of solar cells under working conditions",
pages = "1846-1843",
number = "6",
volume = "9",
url = "https://hdl.handle.net/21.15107/rcub_machinery_667"
}

Vasić, A., Vujisić, M., Lončar, B.,& Osmokrović, P.. (2007). Aging of solar cells under working conditions. in Journal of Optoelectronics and Advanced Materials
National Institute of Optoelectronics., 9(6), 1843-1846.
https://hdl.handle.net/21.15107/rcub_machinery_667

Vasić A, Vujisić M, Lončar B, Osmokrović P. Aging of solar cells under working conditions. in Journal of Optoelectronics and Advanced Materials. 2007;9(6):1843-1846.
https://hdl.handle.net/21.15107/rcub_machinery_667 .

Vasić, Aleksandra, Vujisić, Miloš, Lončar, B., Osmokrović, Predrag, "Aging of solar cells under working conditions" in Journal of Optoelectronics and Advanced Materials, 9, no. 6 (2007):1843-1846,
https://hdl.handle.net/21.15107/rcub_machinery_667 .

TY  - JOUR
AU  - Osmokrović, Predrag
AU  - Vujisić, Miloš
AU  - Stanković, K.
AU  - Vasić, Aleksandra
AU  - Lončar, B.
PY  - 2007
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/705
AB  - This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.
PB  - IOP Publishing Ltd, Bristol
T2  - Plasma Sources Science & Technology
T1  - Mechanism of electrical breakdown of gases for pressures from 10(-9) to 1 bar and inter-electrode gaps from 0.1 to 0.5mm
EP  - 655
IS  - 3
SP  - 643
VL  - 16
DO  - 10.1088/0963-0252/16/3/025
ER  - 

@article{
author = "Osmokrović, Predrag and Vujisić, Miloš and Stanković, K. and Vasić, Aleksandra and Lončar, B.",
year = "2007",
abstract = "This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Plasma Sources Science & Technology",
title = "Mechanism of electrical breakdown of gases for pressures from 10(-9) to 1 bar and inter-electrode gaps from 0.1 to 0.5mm",
pages = "655-643",
number = "3",
volume = "16",
doi = "10.1088/0963-0252/16/3/025"
}

Osmokrović, P., Vujisić, M., Stanković, K., Vasić, A.,& Lončar, B.. (2007). Mechanism of electrical breakdown of gases for pressures from 10(-9) to 1 bar and inter-electrode gaps from 0.1 to 0.5mm. in Plasma Sources Science & Technology
IOP Publishing Ltd, Bristol., 16(3), 643-655.
https://doi.org/10.1088/0963-0252/16/3/025

Osmokrović P, Vujisić M, Stanković K, Vasić A, Lončar B. Mechanism of electrical breakdown of gases for pressures from 10(-9) to 1 bar and inter-electrode gaps from 0.1 to 0.5mm. in Plasma Sources Science & Technology. 2007;16(3):643-655.
doi:10.1088/0963-0252/16/3/025 .

Osmokrović, Predrag, Vujisić, Miloš, Stanković, K., Vasić, Aleksandra, Lončar, B., "Mechanism of electrical breakdown of gases for pressures from 10(-9) to 1 bar and inter-electrode gaps from 0.1 to 0.5mm" in Plasma Sources Science & Technology, 16, no. 3 (2007):643-655,
https://doi.org/10.1088/0963-0252/16/3/025 . .

TY  - CONF
AU  - Osmokrović, Predrag
AU  - Lončar, Boris
AU  - Stanković, Srboljub
AU  - Vasić, Aleksandra
PY  - 2006
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/572
AB  - This paper presents an innovative method for efficient characterization of relevant characteristics of non-linear over-voltage protection elements in low-voltage applications. Standard measuring equipment is modified to enable an efficient and repeatable experimental procedure to investigate characteristics of over-voltage diodes and varistors: volt-ampere characteristic, volt-ohm characteristic, coefficient of non-linearity, and finally, the breakdown voltage. Additionally, an innovative aging estimate algorithm was used. Furthermore, the pseudo-empiric method using the "area law" is used to determine an impulse characteristic of a gas filled surge arrester (GFSA). Suggested experimental procedure offers higher measuring accuracy and repeatability because internal temperature of non-linear elements is virtually unchanged during all experiments. All experimental results are treated statistically to prove high repeatability of suggested approach. Comparison of results obtained by suggested experimental method and "classical" approach, shows minimal discrepancies.
PB  - IEEE Computer Society
C3  - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006
T1  - The innovative method for determining characteristics of over-voltage protection elements
EP  - 653
SP  - 650
DO  - 10.1109/ICMEL.2006.1651052
ER  - 

@conference{
author = "Osmokrović, Predrag and Lončar, Boris and Stanković, Srboljub and Vasić, Aleksandra",
year = "2006",
abstract = "This paper presents an innovative method for efficient characterization of relevant characteristics of non-linear over-voltage protection elements in low-voltage applications. Standard measuring equipment is modified to enable an efficient and repeatable experimental procedure to investigate characteristics of over-voltage diodes and varistors: volt-ampere characteristic, volt-ohm characteristic, coefficient of non-linearity, and finally, the breakdown voltage. Additionally, an innovative aging estimate algorithm was used. Furthermore, the pseudo-empiric method using the "area law" is used to determine an impulse characteristic of a gas filled surge arrester (GFSA). Suggested experimental procedure offers higher measuring accuracy and repeatability because internal temperature of non-linear elements is virtually unchanged during all experiments. All experimental results are treated statistically to prove high repeatability of suggested approach. Comparison of results obtained by suggested experimental method and "classical" approach, shows minimal discrepancies.",
publisher = "IEEE Computer Society",
journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006",
title = "The innovative method for determining characteristics of over-voltage protection elements",
pages = "653-650",
doi = "10.1109/ICMEL.2006.1651052"
}

Osmokrović, P., Lončar, B., Stanković, S.,& Vasić, A.. (2006). The innovative method for determining characteristics of over-voltage protection elements. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006
IEEE Computer Society., 650-653.
https://doi.org/10.1109/ICMEL.2006.1651052

Osmokrović P, Lončar B, Stanković S, Vasić A. The innovative method for determining characteristics of over-voltage protection elements. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006. 2006;:650-653.
doi:10.1109/ICMEL.2006.1651052 .

Osmokrović, Predrag, Lončar, Boris, Stanković, Srboljub, Vasić, Aleksandra, "The innovative method for determining characteristics of over-voltage protection elements" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006 (2006):650-653,
https://doi.org/10.1109/ICMEL.2006.1651052 . .

TY  - CONF
AU  - Lončar, B.
AU  - Osmokrović, Predrag
AU  - Vasić, Aleksandra
AU  - Šašić, Rajko M.
PY  - 2006
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/570
AB  - The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage protection without environmental contamination.
PB  - IEEE Computer Society
C3  - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1  - Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics
EP  - 594
SP  - 591
DO  - 10.1109/ICMEL.2006.1651036
ER  - 

@conference{
author = "Lončar, B. and Osmokrović, Predrag and Vasić, Aleksandra and Šašić, Rajko M.",
year = "2006",
abstract = "The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage protection without environmental contamination.",
publisher = "IEEE Computer Society",
journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics",
pages = "594-591",
doi = "10.1109/ICMEL.2006.1651036"
}

Lončar, B., Osmokrović, P., Vasić, A.,& Šašić, R. M.. (2006). Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
IEEE Computer Society., 591-594.
https://doi.org/10.1109/ICMEL.2006.1651036

Lončar B, Osmokrović P, Vasić A, Šašić RM. Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:591-594.
doi:10.1109/ICMEL.2006.1651036 .

Lončar, B., Osmokrović, Predrag, Vasić, Aleksandra, Šašić, Rajko M., "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):591-594,
https://doi.org/10.1109/ICMEL.2006.1651036 . .

TY  - JOUR
AU  - Stanković, S. J.
AU  - Ilić, Radovan D.
AU  - Petrović, M.
AU  - Lončar, B.
AU  - Vasić, Aleksandra
PY  - 2006
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/643
AB  - The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.
PB  - Trans Tech Publications Ltd, Durnten-Zurich
T2  - Recent Developments in Advanced Materials and Processes
T1  - Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method
EP  - 365
SP  - 361
VL  - 518
DO  - 10.4028/www.scientific.net/MSF.518.361
ER  - 

@article{
author = "Stanković, S. J. and Ilić, Radovan D. and Petrović, M. and Lončar, B. and Vasić, Aleksandra",
year = "2006",
abstract = "The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.",
publisher = "Trans Tech Publications Ltd, Durnten-Zurich",
journal = "Recent Developments in Advanced Materials and Processes",
title = "Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method",
pages = "365-361",
volume = "518",
doi = "10.4028/www.scientific.net/MSF.518.361"
}

Stanković, S. J., Ilić, R. D., Petrović, M., Lončar, B.,& Vasić, A.. (2006). Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method. in Recent Developments in Advanced Materials and Processes
Trans Tech Publications Ltd, Durnten-Zurich., 518, 361-365.
https://doi.org/10.4028/www.scientific.net/MSF.518.361

Stanković SJ, Ilić RD, Petrović M, Lončar B, Vasić A. Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method. in Recent Developments in Advanced Materials and Processes. 2006;518:361-365.
doi:10.4028/www.scientific.net/MSF.518.361 .

Stanković, S. J., Ilić, Radovan D., Petrović, M., Lončar, B., Vasić, Aleksandra, "Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method" in Recent Developments in Advanced Materials and Processes, 518 (2006):361-365,
https://doi.org/10.4028/www.scientific.net/MSF.518.361 . .

TY  - CONF
AU  - Vasić, Aleksandra
AU  - Osmokrović, Predrag
AU  - Lončar, B
AU  - Stanković, S
PY  - 2005
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/475
AB  - Parameters that characterize semiconductor devices are often determined with difficulty, and their values very frequently depend on the method used for measurements and analysis. The extraction of diode parameters from the obtained I-V measurements could be complicated by their dependence on the voltage and the presence of series resistance. Therefore, an interpretation of the experimental I-V data must be very carefully made. In this paper, some methods for obtaining diode parameters such as saturation current, ideality factor and series resistance are presented. An evaluation of these methods based on their application for the extraction of the relevant parameters of photodiodes is also performed. Some of the methods that produce reliable and reproducible results are evaluated based on the experimentally obtained results, and in the view of the complexity of the used methods and their limitations.
PB  - Trans Tech Publications Ltd
C3  - Materials Science Forum
T1  - Extraction of parameters from I-V data for nonideal photodetectors: A comparative study
EP  - 88
SP  - 83
VL  - 494
DO  - 10.4028/0-87849-971-7.83
ER  - 

@conference{
author = "Vasić, Aleksandra and Osmokrović, Predrag and Lončar, B and Stanković, S",
year = "2005",
abstract = "Parameters that characterize semiconductor devices are often determined with difficulty, and their values very frequently depend on the method used for measurements and analysis. The extraction of diode parameters from the obtained I-V measurements could be complicated by their dependence on the voltage and the presence of series resistance. Therefore, an interpretation of the experimental I-V data must be very carefully made. In this paper, some methods for obtaining diode parameters such as saturation current, ideality factor and series resistance are presented. An evaluation of these methods based on their application for the extraction of the relevant parameters of photodiodes is also performed. Some of the methods that produce reliable and reproducible results are evaluated based on the experimentally obtained results, and in the view of the complexity of the used methods and their limitations.",
publisher = "Trans Tech Publications Ltd",
journal = "Materials Science Forum",
title = "Extraction of parameters from I-V data for nonideal photodetectors: A comparative study",
pages = "88-83",
volume = "494",
doi = "10.4028/0-87849-971-7.83"
}

Vasić, A., Osmokrović, P., Lončar, B.,& Stanković, S.. (2005). Extraction of parameters from I-V data for nonideal photodetectors: A comparative study. in Materials Science Forum
Trans Tech Publications Ltd., 494, 83-88.
https://doi.org/10.4028/0-87849-971-7.83

Vasić A, Osmokrović P, Lončar B, Stanković S. Extraction of parameters from I-V data for nonideal photodetectors: A comparative study. in Materials Science Forum. 2005;494:83-88.
doi:10.4028/0-87849-971-7.83 .

Vasić, Aleksandra, Osmokrović, Predrag, Lončar, B, Stanković, S, "Extraction of parameters from I-V data for nonideal photodetectors: A comparative study" in Materials Science Forum, 494 (2005):83-88,
https://doi.org/10.4028/0-87849-971-7.83 . .

TY  - JOUR
AU  - Vasić, Aleksandra
AU  - Osmokrović, Predrag
AU  - Stanković, S
AU  - Lončar, B
PY  - 2004
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/461
AB  - Degradation of electrical and optical characteristics of photodetectors in increased temperature conditions is one of the most important limitation factors for their application. Since most of the electrical processes in semiconductor devices depend, to some extent, on temperature, investigations carried out at temperatures higher than room temperature may reveal possible changes in the output characteristics of a device. Temperature dependence of the current-voltage characteristics could suggest a dominant current flow mechanism, and the values of the ideality factor (n) and n(T) dependence could also indicate the presence, location and type of impurities and defects. This is especially important when impurities, localized near dislocations in the material, have energy levels deep in the energy gap. Such localized energy states could act as traps or recombination centers for charge carriers, modulating output current and inducing current noise in photodetector devices. So-called extent current (fluctuations in the output current), indicates the presence of both generation-recombination and burst noise. Magnitudes of these fluctuations are directly connected to the ideality factor and temperature, so monitoring of the n(T) dependence could indicate the changes (degradation) in not only electrical but also in optical properties of the photodiodes.
PB  - Trans Tech Publications Ltd, Durnten-Zurich
T2  - Progress in Advanced Materials and Processes
T1  - Study of the increased temperature influence on the degradation of photodetectors through ideality factor
EP  - 41
SP  - 37
VL  - 453-454
DO  - 10.4028/www.scientific.net/MSF.453-454.37
ER  - 

@article{
author = "Vasić, Aleksandra and Osmokrović, Predrag and Stanković, S and Lončar, B",
year = "2004",
abstract = "Degradation of electrical and optical characteristics of photodetectors in increased temperature conditions is one of the most important limitation factors for their application. Since most of the electrical processes in semiconductor devices depend, to some extent, on temperature, investigations carried out at temperatures higher than room temperature may reveal possible changes in the output characteristics of a device. Temperature dependence of the current-voltage characteristics could suggest a dominant current flow mechanism, and the values of the ideality factor (n) and n(T) dependence could also indicate the presence, location and type of impurities and defects. This is especially important when impurities, localized near dislocations in the material, have energy levels deep in the energy gap. Such localized energy states could act as traps or recombination centers for charge carriers, modulating output current and inducing current noise in photodetector devices. So-called extent current (fluctuations in the output current), indicates the presence of both generation-recombination and burst noise. Magnitudes of these fluctuations are directly connected to the ideality factor and temperature, so monitoring of the n(T) dependence could indicate the changes (degradation) in not only electrical but also in optical properties of the photodiodes.",
publisher = "Trans Tech Publications Ltd, Durnten-Zurich",
journal = "Progress in Advanced Materials and Processes",
title = "Study of the increased temperature influence on the degradation of photodetectors through ideality factor",
pages = "41-37",
volume = "453-454",
doi = "10.4028/www.scientific.net/MSF.453-454.37"
}

Vasić, A., Osmokrović, P., Stanković, S.,& Lončar, B.. (2004). Study of the increased temperature influence on the degradation of photodetectors through ideality factor. in Progress in Advanced Materials and Processes
Trans Tech Publications Ltd, Durnten-Zurich., 453-454, 37-41.
https://doi.org/10.4028/www.scientific.net/MSF.453-454.37

Vasić A, Osmokrović P, Stanković S, Lončar B. Study of the increased temperature influence on the degradation of photodetectors through ideality factor. in Progress in Advanced Materials and Processes. 2004;453-454:37-41.
doi:10.4028/www.scientific.net/MSF.453-454.37 .

Vasić, Aleksandra, Osmokrović, Predrag, Stanković, S, Lončar, B, "Study of the increased temperature influence on the degradation of photodetectors through ideality factor" in Progress in Advanced Materials and Processes, 453-454 (2004):37-41,
https://doi.org/10.4028/www.scientific.net/MSF.453-454.37 . .

TY  - JOUR
AU  - Osmokrović, Predrag
AU  - Lončar, B
AU  - Stanković, S
AU  - Vasić, Aleksandra
PY  - 2002
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/285
AB  - The aim of this work is examining the influence of the number of the activation-over-voltage pulses to the aging of over-voltage protection elements. Both non-linear (gas-filled surge arresters (GFSA), varistors, over-voltage diodes) and linear (capacitors-constituents of filters) over-voltage protection elements were tested. The instruments employed allow reliable measurements, 1000 consecutive activation were tested. The double-exponential current pulse (amplitude I-1(max) = 13 A, I-2(max) = 16 A, rise time T-1 = 8 mus, fall time T-2 = 20 mus) for non-linear elements and a double-exponential over-voltage pulse (rise time T-1 = 1.2 mus, fall time T-2 = 50 mus) of the amplitude U-1(max) = 320 V, U-2(max) = 480 V and U-3(max) = 640 V for capacitors were used. The experimental results show that the over-voltage diodes are the most reliable elements in view of characteristic modifications that are consequence of aging. However, it was observed that varistors, GFSA and capacitors undergo noticeable changes in characteristics.
PB  - Pergamon-Elsevier Science Ltd, Oxford
T2  - Microelectronics Reliability
T1  - Aging of the over-voltage protection elements caused by over-voltages
EP  - 1966
IS  - 12
SP  - 1959
VL  - 42
DO  - 10.1016/S0026-2714(02)00240-8
ER  - 

@article{
author = "Osmokrović, Predrag and Lončar, B and Stanković, S and Vasić, Aleksandra",
year = "2002",
abstract = "The aim of this work is examining the influence of the number of the activation-over-voltage pulses to the aging of over-voltage protection elements. Both non-linear (gas-filled surge arresters (GFSA), varistors, over-voltage diodes) and linear (capacitors-constituents of filters) over-voltage protection elements were tested. The instruments employed allow reliable measurements, 1000 consecutive activation were tested. The double-exponential current pulse (amplitude I-1(max) = 13 A, I-2(max) = 16 A, rise time T-1 = 8 mus, fall time T-2 = 20 mus) for non-linear elements and a double-exponential over-voltage pulse (rise time T-1 = 1.2 mus, fall time T-2 = 50 mus) of the amplitude U-1(max) = 320 V, U-2(max) = 480 V and U-3(max) = 640 V for capacitors were used. The experimental results show that the over-voltage diodes are the most reliable elements in view of characteristic modifications that are consequence of aging. However, it was observed that varistors, GFSA and capacitors undergo noticeable changes in characteristics.",
publisher = "Pergamon-Elsevier Science Ltd, Oxford",
journal = "Microelectronics Reliability",
title = "Aging of the over-voltage protection elements caused by over-voltages",
pages = "1966-1959",
number = "12",
volume = "42",
doi = "10.1016/S0026-2714(02)00240-8"
}

Osmokrović, P., Lončar, B., Stanković, S.,& Vasić, A.. (2002). Aging of the over-voltage protection elements caused by over-voltages. in Microelectronics Reliability
Pergamon-Elsevier Science Ltd, Oxford., 42(12), 1959-1966.
https://doi.org/10.1016/S0026-2714(02)00240-8

Osmokrović P, Lončar B, Stanković S, Vasić A. Aging of the over-voltage protection elements caused by over-voltages. in Microelectronics Reliability. 2002;42(12):1959-1966.
doi:10.1016/S0026-2714(02)00240-8 .

Osmokrović, Predrag, Lončar, B, Stanković, S, Vasić, Aleksandra, "Aging of the over-voltage protection elements caused by over-voltages" in Microelectronics Reliability, 42, no. 12 (2002):1959-1966,
https://doi.org/10.1016/S0026-2714(02)00240-8 . .

TY  - CONF
AU  - Vasić, Aleksandra
AU  - Stanković, S
AU  - Lončar, B
PY  - 2002
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/269
AB  - Radiation effects in photodetectors (photodiodes) induced by various sources and fluences were studied in this paper. The influence of irradiation was determined by forward current-voltage (I-V) measurements of electrical characteristics. From I-V data, the ideality factor, saturation current, and series resistance were determined as a function of irradiation. Possible degradation of the electrical performance of photodetectors induced by irradiation was studied via ideality factor and its connection with the current transport mechanisms in these devices.
PB  - Trans Tech Publications Ltd
C3  - Materials Science Forum
T1  - Influence of radiation effects on the electrical characteristics of photodetectors
EP  - 174
SP  - 171
VL  - 413
DO  - 10.4028/www.scientific.net/msf.413.171
ER  - 

@conference{
author = "Vasić, Aleksandra and Stanković, S and Lončar, B",
year = "2002",
abstract = "Radiation effects in photodetectors (photodiodes) induced by various sources and fluences were studied in this paper. The influence of irradiation was determined by forward current-voltage (I-V) measurements of electrical characteristics. From I-V data, the ideality factor, saturation current, and series resistance were determined as a function of irradiation. Possible degradation of the electrical performance of photodetectors induced by irradiation was studied via ideality factor and its connection with the current transport mechanisms in these devices.",
publisher = "Trans Tech Publications Ltd",
journal = "Materials Science Forum",
title = "Influence of radiation effects on the electrical characteristics of photodetectors",
pages = "174-171",
volume = "413",
doi = "10.4028/www.scientific.net/msf.413.171"
}

Vasić, A., Stanković, S.,& Lončar, B.. (2002). Influence of radiation effects on the electrical characteristics of photodetectors. in Materials Science Forum
Trans Tech Publications Ltd., 413, 171-174.
https://doi.org/10.4028/www.scientific.net/msf.413.171

Vasić A, Stanković S, Lončar B. Influence of radiation effects on the electrical characteristics of photodetectors. in Materials Science Forum. 2002;413:171-174.
doi:10.4028/www.scientific.net/msf.413.171 .

Vasić, Aleksandra, Stanković, S, Lončar, B, "Influence of radiation effects on the electrical characteristics of photodetectors" in Materials Science Forum, 413 (2002):171-174,
https://doi.org/10.4028/www.scientific.net/msf.413.171 . .