TY  - JOUR
AU  - Ostojić, Stanko M.
AU  - Šašić, Rajko M.
AU  - Lukić, Petar
AU  - Abood, Imhimmad
PY  - 2014
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1911
AB  - Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.
PB  - IOP Publishing Ltd, Bristol
T2  - Physica Scripta
T1  - Surrounding gate long channel nanowire MOSFET modelling-extended analysis
IS  - 11
VL  - 89
DO  - 10.1088/0031-8949/89/11/115802
ER  - 

@article{
author = "Ostojić, Stanko M. and Šašić, Rajko M. and Lukić, Petar and Abood, Imhimmad",
year = "2014",
abstract = "Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Physica Scripta",
title = "Surrounding gate long channel nanowire MOSFET modelling-extended analysis",
number = "11",
volume = "89",
doi = "10.1088/0031-8949/89/11/115802"
}

Ostojić, S. M., Šašić, R. M., Lukić, P.,& Abood, I.. (2014). Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta
IOP Publishing Ltd, Bristol., 89(11).
https://doi.org/10.1088/0031-8949/89/11/115802

Ostojić SM, Šašić RM, Lukić P, Abood I. Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta. 2014;89(11).
doi:10.1088/0031-8949/89/11/115802 .

Ostojić, Stanko M., Šašić, Rajko M., Lukić, Petar, Abood, Imhimmad, "Surrounding gate long channel nanowire MOSFET modelling-extended analysis" in Physica Scripta, 89, no. 11 (2014),
https://doi.org/10.1088/0031-8949/89/11/115802 . .

TY  - JOUR
AU  - Lukić, Petar
AU  - Šašić, Rajko M.
PY  - 2014
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1954
AB  - In this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are presented. The new model of CNT FET current-voltage characteristics is developed and presented. In the model, capacitances of all interfaces are included. Special segment of this model is carrier's mobility model. Modeling of carrier's mobility is exposed. Two different carriers' mobility models are presented: analytical model that is developed and proposed and empirical model that is introduced. All models are modular and relatively simple. The results obtained by using proposed models are in very good agreement with already known ones.
PB  - National Institute of Optoelectronics
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Modeling of carriers mobility impact on CNT FIET current-voltage characteristics
EP  - 1424
IS  - 11-12
SP  - 1418
VL  - 16
UR  - https://hdl.handle.net/21.15107/rcub_technorep_2564
ER  - 

@article{
author = "Lukić, Petar and Šašić, Rajko M.",
year = "2014",
abstract = "In this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are presented. The new model of CNT FET current-voltage characteristics is developed and presented. In the model, capacitances of all interfaces are included. Special segment of this model is carrier's mobility model. Modeling of carrier's mobility is exposed. Two different carriers' mobility models are presented: analytical model that is developed and proposed and empirical model that is introduced. All models are modular and relatively simple. The results obtained by using proposed models are in very good agreement with already known ones.",
publisher = "National Institute of Optoelectronics",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Modeling of carriers mobility impact on CNT FIET current-voltage characteristics",
pages = "1424-1418",
number = "11-12",
volume = "16",
url = "https://hdl.handle.net/21.15107/rcub_technorep_2564"
}

Lukić, P.,& Šašić, R. M.. (2014). Modeling of carriers mobility impact on CNT FIET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials
National Institute of Optoelectronics., 16(11-12), 1418-1424.
https://hdl.handle.net/21.15107/rcub_technorep_2564

Lukić P, Šašić RM. Modeling of carriers mobility impact on CNT FIET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials. 2014;16(11-12):1418-1424.
https://hdl.handle.net/21.15107/rcub_technorep_2564 .

Lukić, Petar, Šašić, Rajko M., "Modeling of carriers mobility impact on CNT FIET current-voltage characteristics" in Journal of Optoelectronics and Advanced Materials, 16, no. 11-12 (2014):1418-1424,
https://hdl.handle.net/21.15107/rcub_technorep_2564 .

TY  - JOUR
AU  - Alkhem, Abdel
AU  - Šašić, Rajko M.
AU  - Lukić, Petar
AU  - Ostojić, Stanko M.
PY  - 2014
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1995
AB  - A conventional vertical double implanted metal-oxide-semiconductor structure contains two n+ regions beneath two symmetrically posed source biases. These n+ regions are surrounded by a p-doped layer, which itself has an abrupt transition to the vertical drift region. Owing to the existence of these p-layers, the 'drift' region has varying cross sections: it is reduced going upward from the bottom (drain bias) to the top. Such a drift region is usually described either by a three piecewise model, which begins with constant cross section that at some point starts narrowing until at some other point it becomes reduced to the region between two p-regions, or by a two piecewise model, whose narrowing region starts right above the drain bias and finishes in the manner described before. The crucial geometrical parameters of the flow profile in the drift region, such as the slope of the cross-section reducing region and the length of the narrowest (accumulation) region are widely used but never determined, or even estimated, in the available literature. In this paper, the least-action principle has been utilized successfully in order to determine the exact values of these parameters and so make the existing models closed. The proof has also been provided, which shows that the three piecewise model described the flow profile better than a two piecewise model more adequately as long as it was permitted by the length of the entire drift region (the energy necessary to restore the specific value of drain current is smaller than for the three piecewise model). The two piecewise model can be accepted in practical calculations only for higher values of drain current far from a triode regime.
PB  - IOP Publishing Ltd, Bristol
T2  - Physica Scripta
T1  - 4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis
IS  - 1
VL  - 89
DO  - 10.1088/0031-8949/89/01/015803
ER  - 

@article{
author = "Alkhem, Abdel and Šašić, Rajko M. and Lukić, Petar and Ostojić, Stanko M.",
year = "2014",
abstract = "A conventional vertical double implanted metal-oxide-semiconductor structure contains two n+ regions beneath two symmetrically posed source biases. These n+ regions are surrounded by a p-doped layer, which itself has an abrupt transition to the vertical drift region. Owing to the existence of these p-layers, the 'drift' region has varying cross sections: it is reduced going upward from the bottom (drain bias) to the top. Such a drift region is usually described either by a three piecewise model, which begins with constant cross section that at some point starts narrowing until at some other point it becomes reduced to the region between two p-regions, or by a two piecewise model, whose narrowing region starts right above the drain bias and finishes in the manner described before. The crucial geometrical parameters of the flow profile in the drift region, such as the slope of the cross-section reducing region and the length of the narrowest (accumulation) region are widely used but never determined, or even estimated, in the available literature. In this paper, the least-action principle has been utilized successfully in order to determine the exact values of these parameters and so make the existing models closed. The proof has also been provided, which shows that the three piecewise model described the flow profile better than a two piecewise model more adequately as long as it was permitted by the length of the entire drift region (the energy necessary to restore the specific value of drain current is smaller than for the three piecewise model). The two piecewise model can be accepted in practical calculations only for higher values of drain current far from a triode regime.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Physica Scripta",
title = "4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis",
number = "1",
volume = "89",
doi = "10.1088/0031-8949/89/01/015803"
}

Alkhem, A., Šašić, R. M., Lukić, P.,& Ostojić, S. M.. (2014). 4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis. in Physica Scripta
IOP Publishing Ltd, Bristol., 89(1).
https://doi.org/10.1088/0031-8949/89/01/015803

Alkhem A, Šašić RM, Lukić P, Ostojić SM. 4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis. in Physica Scripta. 2014;89(1).
doi:10.1088/0031-8949/89/01/015803 .

Alkhem, Abdel, Šašić, Rajko M., Lukić, Petar, Ostojić, Stanko M., "4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis" in Physica Scripta, 89, no. 1 (2014),
https://doi.org/10.1088/0031-8949/89/01/015803 . .

TY  - JOUR
AU  - Abood, Imhammad
AU  - Lukić, Petar
AU  - Šašić, Rajko M.
AU  - Alkoash, Abed Alkhem
AU  - Ostojić, Stanko M.
PY  - 2013
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1730
AB  - 4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Optoelectronics and Advanced Materials-Rapid Communications
T1  - 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance
EP  - 333
IS  - 5-6
SP  - 329
VL  - 7
UR  - https://hdl.handle.net/21.15107/rcub_technorep_2417
ER  - 

@article{
author = "Abood, Imhammad and Lukić, Petar and Šašić, Rajko M. and Alkoash, Abed Alkhem and Ostojić, Stanko M.",
year = "2013",
abstract = "4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Optoelectronics and Advanced Materials-Rapid Communications",
title = "4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance",
pages = "333-329",
number = "5-6",
volume = "7",
url = "https://hdl.handle.net/21.15107/rcub_technorep_2417"
}

Abood, I., Lukić, P., Šašić, R. M., Alkoash, A. A.,& Ostojić, S. M.. (2013). 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance. in Optoelectronics and Advanced Materials-Rapid Communications
Natl Inst Optoelectronics, Bucharest-Magurele., 7(5-6), 329-333.
https://hdl.handle.net/21.15107/rcub_technorep_2417

Abood I, Lukić P, Šašić RM, Alkoash AA, Ostojić SM. 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance. in Optoelectronics and Advanced Materials-Rapid Communications. 2013;7(5-6):329-333.
https://hdl.handle.net/21.15107/rcub_technorep_2417 .

Abood, Imhammad, Lukić, Petar, Šašić, Rajko M., Alkoash, Abed Alkhem, Ostojić, Stanko M., "4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance" in Optoelectronics and Advanced Materials-Rapid Communications, 7, no. 5-6 (2013):329-333,
https://hdl.handle.net/21.15107/rcub_technorep_2417 .

TY  - JOUR
AU  - Abood, Imhimmad
AU  - Šašić, Rajko M.
AU  - Ostojić, Stanko M.
AU  - Lukić, Petar
PY  - 2013
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1673
AB  - Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.
PB  - IOP Publishing Ltd, Bristol
T2  - Japanese Journal of Applied Physics
T1  - Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
IS  - 9
VL  - 52
DO  - 10.7567/JJAP.52.094302
ER  - 

@article{
author = "Abood, Imhimmad and Šašić, Rajko M. and Ostojić, Stanko M. and Lukić, Petar",
year = "2013",
abstract = "Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Japanese Journal of Applied Physics",
title = "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy",
number = "9",
volume = "52",
doi = "10.7567/JJAP.52.094302"
}

Abood, I., Šašić, R. M., Ostojić, S. M.,& Lukić, P.. (2013). Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics
IOP Publishing Ltd, Bristol., 52(9).
https://doi.org/10.7567/JJAP.52.094302

Abood I, Šašić RM, Ostojić SM, Lukić P. Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics. 2013;52(9).
doi:10.7567/JJAP.52.094302 .

Abood, Imhimmad, Šašić, Rajko M., Ostojić, Stanko M., Lukić, Petar, "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy" in Japanese Journal of Applied Physics, 52, no. 9 (2013),
https://doi.org/10.7567/JJAP.52.094302 . .

TY  - JOUR
AU  - Vasić, Dušan B.
AU  - Lukić, Petar
AU  - Lukić, Vladan M.
AU  - Šašić, Rajko M.
PY  - 2012
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1356
AB  - In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Analytical model of CNT FET current-voltage characteristics
EP  - 182
IS  - 1-2
SP  - 176
VL  - 14
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1980
ER  - 

@article{
author = "Vasić, Dušan B. and Lukić, Petar and Lukić, Vladan M. and Šašić, Rajko M.",
year = "2012",
abstract = "In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Analytical model of CNT FET current-voltage characteristics",
pages = "182-176",
number = "1-2",
volume = "14",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1980"
}

Vasić, D. B., Lukić, P., Lukić, V. M.,& Šašić, R. M.. (2012). Analytical model of CNT FET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 14(1-2), 176-182.
https://hdl.handle.net/21.15107/rcub_technorep_1980

Vasić DB, Lukić P, Lukić VM, Šašić RM. Analytical model of CNT FET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials. 2012;14(1-2):176-182.
https://hdl.handle.net/21.15107/rcub_technorep_1980 .

Vasić, Dušan B., Lukić, Petar, Lukić, Vladan M., Šašić, Rajko M., "Analytical model of CNT FET current-voltage characteristics" in Journal of Optoelectronics and Advanced Materials, 14, no. 1-2 (2012):176-182,
https://hdl.handle.net/21.15107/rcub_technorep_1980 .

TY  - JOUR
AU  - Lukić, Petar
AU  - Šašić, Rajko M.
AU  - Lončar, B. B.
AU  - Žunjić, Aleksandar
PY  - 2011
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1167
AB  - This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones..
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Optoelectronics and Advanced Materials-Rapid Communications
T1  - Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics
EP  - 554
IS  - 5-6
SP  - 551
VL  - 5
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1945
ER  - 

@article{
author = "Lukić, Petar and Šašić, Rajko M. and Lončar, B. B. and Žunjić, Aleksandar",
year = "2011",
abstract = "This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones..",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Optoelectronics and Advanced Materials-Rapid Communications",
title = "Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics",
pages = "554-551",
number = "5-6",
volume = "5",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1945"
}

Lukić, P., Šašić, R. M., Lončar, B. B.,& Žunjić, A.. (2011). Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics. in Optoelectronics and Advanced Materials-Rapid Communications
Natl Inst Optoelectronics, Bucharest-Magurele., 5(5-6), 551-554.
https://hdl.handle.net/21.15107/rcub_technorep_1945

Lukić P, Šašić RM, Lončar BB, Žunjić A. Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics. in Optoelectronics and Advanced Materials-Rapid Communications. 2011;5(5-6):551-554.
https://hdl.handle.net/21.15107/rcub_technorep_1945 .

Lukić, Petar, Šašić, Rajko M., Lončar, B. B., Žunjić, Aleksandar, "Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics" in Optoelectronics and Advanced Materials-Rapid Communications, 5, no. 5-6 (2011):551-554,
https://hdl.handle.net/21.15107/rcub_technorep_1945 .

TY  - JOUR
AU  - Alkoash, Abed Alkhem
AU  - Šašić, Rajko M.
AU  - Ostojić, Stanko M.
AU  - Lukić, Petar
PY  - 2011
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1153
AB  - The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.
PB  - Amer Scientific Publishers, Stevenson Ranch
T2  - Journal of Computational and Theoretical Nanoscience
T1  - An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs
EP  - 50
IS  - 1
SP  - 47
VL  - 8
DO  - 10.1166/jctn.2011.1657
ER  - 

@article{
author = "Alkoash, Abed Alkhem and Šašić, Rajko M. and Ostojić, Stanko M. and Lukić, Petar",
year = "2011",
abstract = "The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.",
publisher = "Amer Scientific Publishers, Stevenson Ranch",
journal = "Journal of Computational and Theoretical Nanoscience",
title = "An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs",
pages = "50-47",
number = "1",
volume = "8",
doi = "10.1166/jctn.2011.1657"
}

Alkoash, A. A., Šašić, R. M., Ostojić, S. M.,& Lukić, P.. (2011). An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs. in Journal of Computational and Theoretical Nanoscience
Amer Scientific Publishers, Stevenson Ranch., 8(1), 47-50.
https://doi.org/10.1166/jctn.2011.1657

Alkoash AA, Šašić RM, Ostojić SM, Lukić P. An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs. in Journal of Computational and Theoretical Nanoscience. 2011;8(1):47-50.
doi:10.1166/jctn.2011.1657 .

Alkoash, Abed Alkhem, Šašić, Rajko M., Ostojić, Stanko M., Lukić, Petar, "An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs" in Journal of Computational and Theoretical Nanoscience, 8, no. 1 (2011):47-50,
https://doi.org/10.1166/jctn.2011.1657 . .

TY  - JOUR
AU  - Šašić, Rajko M.
AU  - Lukić, Petar
AU  - Ostojić, Stanko M.
AU  - Alkoash, Abed Alkhem
PY  - 2010
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1104
AB  - The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
EP  - 1164
IS  - 5
SP  - 1161
VL  - 12
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1581
ER  - 

@article{
author = "Šašić, Rajko M. and Lukić, Petar and Ostojić, Stanko M. and Alkoash, Abed Alkhem",
year = "2010",
abstract = "The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs",
pages = "1164-1161",
number = "5",
volume = "12",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1581"
}

Šašić, R. M., Lukić, P., Ostojić, S. M.,& Alkoash, A. A.. (2010). The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 12(5), 1161-1164.
https://hdl.handle.net/21.15107/rcub_technorep_1581

Šašić RM, Lukić P, Ostojić SM, Alkoash AA. The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials. 2010;12(5):1161-1164.
https://hdl.handle.net/21.15107/rcub_technorep_1581 .

Šašić, Rajko M., Lukić, Petar, Ostojić, Stanko M., Alkoash, Abed Alkhem, "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs" in Journal of Optoelectronics and Advanced Materials, 12, no. 5 (2010):1161-1164,
https://hdl.handle.net/21.15107/rcub_technorep_1581 .

TY  - JOUR
AU  - Lukić, Vladan M.
AU  - Lukić, Petar
AU  - Šašić, Rajko M.
PY  - 2010
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/1081
AB  - Metal-izolator-poluprovodnik struktura (MIS -Metal-Insulator-Semiconductor struktura) je sastavni deo najvećeg broja savremenih elektronskih komponenti i naprava. Otuda istraživanje i analiziranje fizičkih procesa koji se odvijaju u pomenutoj strukturi ima fundamentalan značaj. U ovom radu razvijen je analitički model električnog polja, potencijala i koncentracije slobodnih nosilaca naelektrisanja u poluprovodničkom sloju (podlozi) MIS strukture. Pretpostavljeno je da su slojevi metala i izolatora veoma tanki, što odgovara standardima koji se koriste prilikom izrade savremenih elektronskih naprava. Na osnovu predloženog modela, izvršene su simulacije raspodele električnih karakteristika koje nastaju pod uticajem jednosmernog napona na metalnom sloju. Dobijeni rezultati su prikazani grafički i analizirani.
AB  - In this paper the new analytical model of MIS (Metal-Insulator -Semiconductor) structure, in microelectron devices, is proposed. Presented model is relatively simple and, at the same time, the results obtained by the proposed model are in good agreement with already known ones. Developed model is modular, thus it can easily be analyzed, tested and eventually changed. Special model for carriers mobility is also proposed. The mobility dependence on temperature is also included in the proposed mobility model and therefore, temperature influence on MIS behavior. On the bases of the model that is presented, algorithm was made and simulations of electrical field potential distribution and carriers concentration in semiconductor layer of MIS structure, under influence of DC voltage, were performed. Obtained results are analyzed and presented in graphical form.
PB  - Savez inženjera i tehničara Srbije, Beograd
T2  - Tehnika - Novi materijali
T1  - Analitički model MIS strukture u elektronskim napravama
T1  - Analytical model of MIS structure in electron devices
EP  - 19
IS  - 1
SP  - 15
VL  - 19
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1608
ER  - 

@article{
author = "Lukić, Vladan M. and Lukić, Petar and Šašić, Rajko M.",
year = "2010",
abstract = "Metal-izolator-poluprovodnik struktura (MIS -Metal-Insulator-Semiconductor struktura) je sastavni deo najvećeg broja savremenih elektronskih komponenti i naprava. Otuda istraživanje i analiziranje fizičkih procesa koji se odvijaju u pomenutoj strukturi ima fundamentalan značaj. U ovom radu razvijen je analitički model električnog polja, potencijala i koncentracije slobodnih nosilaca naelektrisanja u poluprovodničkom sloju (podlozi) MIS strukture. Pretpostavljeno je da su slojevi metala i izolatora veoma tanki, što odgovara standardima koji se koriste prilikom izrade savremenih elektronskih naprava. Na osnovu predloženog modela, izvršene su simulacije raspodele električnih karakteristika koje nastaju pod uticajem jednosmernog napona na metalnom sloju. Dobijeni rezultati su prikazani grafički i analizirani., In this paper the new analytical model of MIS (Metal-Insulator -Semiconductor) structure, in microelectron devices, is proposed. Presented model is relatively simple and, at the same time, the results obtained by the proposed model are in good agreement with already known ones. Developed model is modular, thus it can easily be analyzed, tested and eventually changed. Special model for carriers mobility is also proposed. The mobility dependence on temperature is also included in the proposed mobility model and therefore, temperature influence on MIS behavior. On the bases of the model that is presented, algorithm was made and simulations of electrical field potential distribution and carriers concentration in semiconductor layer of MIS structure, under influence of DC voltage, were performed. Obtained results are analyzed and presented in graphical form.",
publisher = "Savez inženjera i tehničara Srbije, Beograd",
journal = "Tehnika - Novi materijali",
title = "Analitički model MIS strukture u elektronskim napravama, Analytical model of MIS structure in electron devices",
pages = "19-15",
number = "1",
volume = "19",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1608"
}

Lukić, V. M., Lukić, P.,& Šašić, R. M.. (2010). Analitički model MIS strukture u elektronskim napravama. in Tehnika - Novi materijali
Savez inženjera i tehničara Srbije, Beograd., 19(1), 15-19.
https://hdl.handle.net/21.15107/rcub_technorep_1608

Lukić VM, Lukić P, Šašić RM. Analitički model MIS strukture u elektronskim napravama. in Tehnika - Novi materijali. 2010;19(1):15-19.
https://hdl.handle.net/21.15107/rcub_technorep_1608 .

Lukić, Vladan M., Lukić, Petar, Šašić, Rajko M., "Analitički model MIS strukture u elektronskim napravama" in Tehnika - Novi materijali, 19, no. 1 (2010):15-19,
https://hdl.handle.net/21.15107/rcub_technorep_1608 .

TY  - JOUR
AU  - Lukić, Vladan M.
AU  - Lukić, Petar
AU  - Šašić, Rajko M.
PY  - 2009
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/931
AB  - U ovom radu su prikazani rezultati istraživanja i modelovanja karakteristika jedne od danas najčešće korišćenih elektronskih komponenti MOSFETa (Metal Oxide Semiconductor Field Effect Transistor) izrađenog na bazi SiC (silicijum karbida). Najpre je ukazano na veoma dobre karakteristike i prednosti koje SiC ima u odnosu na standardne materijale koji se koriste u mikroelektronici. Zatim su predloženi najznačajniji koraci u razvijanju analitičkih modela strujno-naponskih karakteristika SiC MOSFET strukture. Na osnovu ovih modela, postavljeni su novi analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu ovog tranzistora. Korišćenjem predloženih modela izvršene su simulacije. Dobijeni rezultati su u visokom stepenu saglasni sa do sada poznatim i publikovanim.
AB  - In this paper, the results of investigation and modeling one of the most frequently used electron component - MOSFET (Metal Oxide Semiconductor Field Effect Transistor), made of SiC, are presented. At the begging, very good characteristics and advantages that SiC has, in comparison with standard electron materials, are exposed. Than, the most important steps, in SiC MOSFET current-voltage characteristics development are proposed. Based on that models, new analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance are obtained. Achieved models describe complex physics phenomena that exist in SiC MOSFET very accurate and, at the same time, proposed models are relatively simple. Results obtained by using proposed models are in very good agreement with already known ones.
PB  - Savez inženjera i tehničara Srbije, Beograd
T2  - Tehnika - Novi materijali
T1  - Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture
T1  - Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance
EP  - 20
IS  - 1
SP  - 15
VL  - 18
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1397
ER  - 

@article{
author = "Lukić, Vladan M. and Lukić, Petar and Šašić, Rajko M.",
year = "2009",
abstract = "U ovom radu su prikazani rezultati istraživanja i modelovanja karakteristika jedne od danas najčešće korišćenih elektronskih komponenti MOSFETa (Metal Oxide Semiconductor Field Effect Transistor) izrađenog na bazi SiC (silicijum karbida). Najpre je ukazano na veoma dobre karakteristike i prednosti koje SiC ima u odnosu na standardne materijale koji se koriste u mikroelektronici. Zatim su predloženi najznačajniji koraci u razvijanju analitičkih modela strujno-naponskih karakteristika SiC MOSFET strukture. Na osnovu ovih modela, postavljeni su novi analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu ovog tranzistora. Korišćenjem predloženih modela izvršene su simulacije. Dobijeni rezultati su u visokom stepenu saglasni sa do sada poznatim i publikovanim., In this paper, the results of investigation and modeling one of the most frequently used electron component - MOSFET (Metal Oxide Semiconductor Field Effect Transistor), made of SiC, are presented. At the begging, very good characteristics and advantages that SiC has, in comparison with standard electron materials, are exposed. Than, the most important steps, in SiC MOSFET current-voltage characteristics development are proposed. Based on that models, new analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance are obtained. Achieved models describe complex physics phenomena that exist in SiC MOSFET very accurate and, at the same time, proposed models are relatively simple. Results obtained by using proposed models are in very good agreement with already known ones.",
publisher = "Savez inženjera i tehničara Srbije, Beograd",
journal = "Tehnika - Novi materijali",
title = "Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture, Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance",
pages = "20-15",
number = "1",
volume = "18",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1397"
}

Lukić, V. M., Lukić, P.,& Šašić, R. M.. (2009). Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture. in Tehnika - Novi materijali
Savez inženjera i tehničara Srbije, Beograd., 18(1), 15-20.
https://hdl.handle.net/21.15107/rcub_technorep_1397

Lukić VM, Lukić P, Šašić RM. Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture. in Tehnika - Novi materijali. 2009;18(1):15-20.
https://hdl.handle.net/21.15107/rcub_technorep_1397 .

Lukić, Vladan M., Lukić, Petar, Šašić, Rajko M., "Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture" in Tehnika - Novi materijali, 18, no. 1 (2009):15-20,
https://hdl.handle.net/21.15107/rcub_technorep_1397 .

TY  - JOUR
AU  - Šašić, Rajko M.
AU  - Lukić, Petar
AU  - Ostojić, Stanko M.
AU  - Ramović, Rifat M.
PY  - 2008
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/787
AB  - One of our previous papers was devoted to threshold voltage in MOSFETs and MODFETs viewed as a problem of nonlinear dynamics. The behavior of surface carriers' concentration under D.C. (direct current) applied voltage has been investigated in details. In this paper we went a step further and investigated the behavior of the same quantity under combined D.C. and A.C. (alternating current). As a main result emerged that it was impossible to cause small harmonic oscillations of surface carriers' concentration around some equilibrium value regardless of applied D.C. voltage and thus imposed operating regime.
PB  - National Institute of Optoelectronics
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Surface carriers' concentration dynamics caused by a small alternating applied voltage
EP  - 3435
IS  - 12
SP  - 3430
VL  - 10
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1261
ER  - 

@article{
author = "Šašić, Rajko M. and Lukić, Petar and Ostojić, Stanko M. and Ramović, Rifat M.",
year = "2008",
abstract = "One of our previous papers was devoted to threshold voltage in MOSFETs and MODFETs viewed as a problem of nonlinear dynamics. The behavior of surface carriers' concentration under D.C. (direct current) applied voltage has been investigated in details. In this paper we went a step further and investigated the behavior of the same quantity under combined D.C. and A.C. (alternating current). As a main result emerged that it was impossible to cause small harmonic oscillations of surface carriers' concentration around some equilibrium value regardless of applied D.C. voltage and thus imposed operating regime.",
publisher = "National Institute of Optoelectronics",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Surface carriers' concentration dynamics caused by a small alternating applied voltage",
pages = "3435-3430",
number = "12",
volume = "10",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1261"
}

Šašić, R. M., Lukić, P., Ostojić, S. M.,& Ramović, R. M.. (2008). Surface carriers' concentration dynamics caused by a small alternating applied voltage. in Journal of Optoelectronics and Advanced Materials
National Institute of Optoelectronics., 10(12), 3430-3435.
https://hdl.handle.net/21.15107/rcub_technorep_1261

Šašić RM, Lukić P, Ostojić SM, Ramović RM. Surface carriers' concentration dynamics caused by a small alternating applied voltage. in Journal of Optoelectronics and Advanced Materials. 2008;10(12):3430-3435.
https://hdl.handle.net/21.15107/rcub_technorep_1261 .

Šašić, Rajko M., Lukić, Petar, Ostojić, Stanko M., Ramović, Rifat M., "Surface carriers' concentration dynamics caused by a small alternating applied voltage" in Journal of Optoelectronics and Advanced Materials, 10, no. 12 (2008):3430-3435,
https://hdl.handle.net/21.15107/rcub_technorep_1261 .

TY  - CONF
AU  - Ramović, Rifat M.
AU  - Lukić, Petar
AU  - Šašić, Rajko M.
AU  - Ostojić, Stanko M.
PY  - 2008
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/851
AB  - In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.
PB  - IEEE, New York
C3  - 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
T1  - Analytical model of a Si TFT with cylindrical source and drain
EP  - +
SP  - 193
DO  - 10.1109/ICMEL.2008.4559256
ER  - 

@conference{
author = "Ramović, Rifat M. and Lukić, Petar and Šašić, Rajko M. and Ostojić, Stanko M.",
year = "2008",
abstract = "In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.",
publisher = "IEEE, New York",
journal = "2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings",
title = "Analytical model of a Si TFT with cylindrical source and drain",
pages = "+-193",
doi = "10.1109/ICMEL.2008.4559256"
}

Ramović, R. M., Lukić, P., Šašić, R. M.,& Ostojić, S. M.. (2008). Analytical model of a Si TFT with cylindrical source and drain. in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
IEEE, New York., 193-+.
https://doi.org/10.1109/ICMEL.2008.4559256

Ramović RM, Lukić P, Šašić RM, Ostojić SM. Analytical model of a Si TFT with cylindrical source and drain. in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings. 2008;:193-+.
doi:10.1109/ICMEL.2008.4559256 .

Ramović, Rifat M., Lukić, Petar, Šašić, Rajko M., Ostojić, Stanko M., "Analytical model of a Si TFT with cylindrical source and drain" in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings (2008):193-+,
https://doi.org/10.1109/ICMEL.2008.4559256 . .

TY  - CONF
AU  - Šašić, Rajko M.
AU  - Lukić, Petar
PY  - 2007
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/687
AB  - Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.
PB  - Trans Tech Publications Ltd
C3  - Materials Science Forum
T1  - Conduction mechanism based model of organic field effect transistor structure
EP  - 130
SP  - 125
VL  - 555
DO  - 10.4028/www.scientific.net/MSF.555.125
ER  - 

@conference{
author = "Šašić, Rajko M. and Lukić, Petar",
year = "2007",
abstract = "Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.",
publisher = "Trans Tech Publications Ltd",
journal = "Materials Science Forum",
title = "Conduction mechanism based model of organic field effect transistor structure",
pages = "130-125",
volume = "555",
doi = "10.4028/www.scientific.net/MSF.555.125"
}

Šašić, R. M.,& Lukić, P.. (2007). Conduction mechanism based model of organic field effect transistor structure. in Materials Science Forum
Trans Tech Publications Ltd., 555, 125-130.
https://doi.org/10.4028/www.scientific.net/MSF.555.125

Šašić RM, Lukić P. Conduction mechanism based model of organic field effect transistor structure. in Materials Science Forum. 2007;555:125-130.
doi:10.4028/www.scientific.net/MSF.555.125 .

Šašić, Rajko M., Lukić, Petar, "Conduction mechanism based model of organic field effect transistor structure" in Materials Science Forum, 555 (2007):125-130,
https://doi.org/10.4028/www.scientific.net/MSF.555.125 . .

TY  - JOUR
AU  - Šašić, Rajko M.
AU  - Lukić, Petar
AU  - Ramović, Rifat M.
AU  - Ostojić, Stanko M.
PY  - 2007
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/683
AB  - A widely known (and also very well examined) problem of threshold voltage in MOSFETs and MODFETs has been described with the tools of nonlinear dynamics. Some interesting features of such devices have been derived, together with the outstanding differences between them.
PB  - National Institute of Optoelectronics
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics
EP  - 2708
IS  - 9
SP  - 2703
VL  - 9
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1009
ER  - 

@article{
author = "Šašić, Rajko M. and Lukić, Petar and Ramović, Rifat M. and Ostojić, Stanko M.",
year = "2007",
abstract = "A widely known (and also very well examined) problem of threshold voltage in MOSFETs and MODFETs has been described with the tools of nonlinear dynamics. Some interesting features of such devices have been derived, together with the outstanding differences between them.",
publisher = "National Institute of Optoelectronics",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics",
pages = "2708-2703",
number = "9",
volume = "9",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1009"
}

Šašić, R. M., Lukić, P., Ramović, R. M.,& Ostojić, S. M.. (2007). Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics. in Journal of Optoelectronics and Advanced Materials
National Institute of Optoelectronics., 9(9), 2703-2708.
https://hdl.handle.net/21.15107/rcub_technorep_1009

Šašić RM, Lukić P, Ramović RM, Ostojić SM. Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics. in Journal of Optoelectronics and Advanced Materials. 2007;9(9):2703-2708.
https://hdl.handle.net/21.15107/rcub_technorep_1009 .

Šašić, Rajko M., Lukić, Petar, Ramović, Rifat M., Ostojić, Stanko M., "Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics" in Journal of Optoelectronics and Advanced Materials, 9, no. 9 (2007):2703-2708,
https://hdl.handle.net/21.15107/rcub_technorep_1009 .

TY  - CONF
AU  - Lukić, Petar
AU  - Ramović, Rifat M.
AU  - Šašić, Rajko M.
PY  - 2007
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/680
AB  - The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.
PB  - Trans Tech Publications Ltd
C3  - Materials Science Forum
T1  - Modeling and investigation of SiGe based MOSFET structure transport characteristics
EP  - 106
SP  - 101
VL  - 555
DO  - 10.4028/0-87849-441-3.101
ER  - 

@conference{
author = "Lukić, Petar and Ramović, Rifat M. and Šašić, Rajko M.",
year = "2007",
abstract = "The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.",
publisher = "Trans Tech Publications Ltd",
journal = "Materials Science Forum",
title = "Modeling and investigation of SiGe based MOSFET structure transport characteristics",
pages = "106-101",
volume = "555",
doi = "10.4028/0-87849-441-3.101"
}

Lukić, P., Ramović, R. M.,& Šašić, R. M.. (2007). Modeling and investigation of SiGe based MOSFET structure transport characteristics. in Materials Science Forum
Trans Tech Publications Ltd., 555, 101-106.
https://doi.org/10.4028/0-87849-441-3.101

Lukić P, Ramović RM, Šašić RM. Modeling and investigation of SiGe based MOSFET structure transport characteristics. in Materials Science Forum. 2007;555:101-106.
doi:10.4028/0-87849-441-3.101 .

Lukić, Petar, Ramović, Rifat M., Šašić, Rajko M., "Modeling and investigation of SiGe based MOSFET structure transport characteristics" in Materials Science Forum, 555 (2007):101-106,
https://doi.org/10.4028/0-87849-441-3.101 . .

TY  - JOUR
AU  - Haber, Aleksandar M.
AU  - Lukić, Petar
AU  - Šašić, Rajko M.
PY  - 2007
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/745
AB  - U radu je razmatran uticaj temperature na strujno-naponske karakteristike MOSFET strukture izrađene na bazi SiC, koji je analitički modelovan kroz njen uticaj na pokretljivost nosilaca. Predloženi model pored uticaja temperature obuhvata i električne, tehnološke i geometrijske parametre tranzistora. Prednost izloženog modela je, što se pored sveobuhvatnosti, odlikuje i jednostavnošću. Model je modularan, tako da se lako može testirati, menjati i eventualno unaprediti. Na bazi predstavljenog modela izvršene su simulacije. Dobijeni rezultati su saglasni sa već poznatim i dostupnim u literaturi.
AB  - In this paper temperature dependence on current-voltage characteristics of a SiC based MOSFET structure is considered. This influence is modeled by introducing temperature impact on carrier's mobility. Proposed model includes electrical, technological and geometrical transitory parameters. The advantage of the exposed model is that it is simple and, at the same time comprehensive. The model is modular, thus it can be easily tested and eventually improved. By using the proposed model, simulations were performed. Obtained results are in a very good agreement with the already published ones.
PB  - Savez inženjera i tehničara Srbije, Beograd
T2  - Tehnika - Novi materijali
T1  - Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC
T1  - Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics
EP  - 6
IS  - 2
SP  - 1
VL  - 16
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1191
ER  - 

@article{
author = "Haber, Aleksandar M. and Lukić, Petar and Šašić, Rajko M.",
year = "2007",
abstract = "U radu je razmatran uticaj temperature na strujno-naponske karakteristike MOSFET strukture izrađene na bazi SiC, koji je analitički modelovan kroz njen uticaj na pokretljivost nosilaca. Predloženi model pored uticaja temperature obuhvata i električne, tehnološke i geometrijske parametre tranzistora. Prednost izloženog modela je, što se pored sveobuhvatnosti, odlikuje i jednostavnošću. Model je modularan, tako da se lako može testirati, menjati i eventualno unaprediti. Na bazi predstavljenog modela izvršene su simulacije. Dobijeni rezultati su saglasni sa već poznatim i dostupnim u literaturi., In this paper temperature dependence on current-voltage characteristics of a SiC based MOSFET structure is considered. This influence is modeled by introducing temperature impact on carrier's mobility. Proposed model includes electrical, technological and geometrical transitory parameters. The advantage of the exposed model is that it is simple and, at the same time comprehensive. The model is modular, thus it can be easily tested and eventually improved. By using the proposed model, simulations were performed. Obtained results are in a very good agreement with the already published ones.",
publisher = "Savez inženjera i tehničara Srbije, Beograd",
journal = "Tehnika - Novi materijali",
title = "Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC, Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics",
pages = "6-1",
number = "2",
volume = "16",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1191"
}

Haber, A. M., Lukić, P.,& Šašić, R. M.. (2007). Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC. in Tehnika - Novi materijali
Savez inženjera i tehničara Srbije, Beograd., 16(2), 1-6.
https://hdl.handle.net/21.15107/rcub_technorep_1191

Haber AM, Lukić P, Šašić RM. Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC. in Tehnika - Novi materijali. 2007;16(2):1-6.
https://hdl.handle.net/21.15107/rcub_technorep_1191 .

Haber, Aleksandar M., Lukić, Petar, Šašić, Rajko M., "Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC" in Tehnika - Novi materijali, 16, no. 2 (2007):1-6,
https://hdl.handle.net/21.15107/rcub_technorep_1191 .

TY  - CONF
AU  - Lukić, Petar
AU  - Ramović, Rifat M.
AU  - Šašić, Rajko M.
PY  - 2006
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/571
AB  - In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones.
PB  - IEEE Computer Society
C3  - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1  - A new threshold voltage analytical model of strained Si/SiGe MOSFET
EP  - 475
SP  - 472
DO  - 10.1109/ICMEL.2006.1651004
ER  - 

@conference{
author = "Lukić, Petar and Ramović, Rifat M. and Šašić, Rajko M.",
year = "2006",
abstract = "In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones.",
publisher = "IEEE Computer Society",
journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "A new threshold voltage analytical model of strained Si/SiGe MOSFET",
pages = "475-472",
doi = "10.1109/ICMEL.2006.1651004"
}

Lukić, P., Ramović, R. M.,& Šašić, R. M.. (2006). A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
IEEE Computer Society., 472-475.
https://doi.org/10.1109/ICMEL.2006.1651004

Lukić P, Ramović RM, Šašić RM. A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:472-475.
doi:10.1109/ICMEL.2006.1651004 .

Lukić, Petar, Ramović, Rifat M., Šašić, Rajko M., "A new threshold voltage analytical model of strained Si/SiGe MOSFET" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):472-475,
https://doi.org/10.1109/ICMEL.2006.1651004 . .

TY  - CONF
AU  - Lončar, B.
AU  - Osmokrović, Predrag
AU  - Vasić, Aleksandra
AU  - Šašić, Rajko M.
PY  - 2006
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/570
AB  - The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage protection without environmental contamination.
PB  - IEEE Computer Society
C3  - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1  - Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics
EP  - 594
SP  - 591
DO  - 10.1109/ICMEL.2006.1651036
ER  - 

@conference{
author = "Lončar, B. and Osmokrović, Predrag and Vasić, Aleksandra and Šašić, Rajko M.",
year = "2006",
abstract = "The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage protection without environmental contamination.",
publisher = "IEEE Computer Society",
journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics",
pages = "594-591",
doi = "10.1109/ICMEL.2006.1651036"
}

Lončar, B., Osmokrović, P., Vasić, A.,& Šašić, R. M.. (2006). Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
IEEE Computer Society., 591-594.
https://doi.org/10.1109/ICMEL.2006.1651036

Lončar B, Osmokrović P, Vasić A, Šašić RM. Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:591-594.
doi:10.1109/ICMEL.2006.1651036 .

Lončar, B., Osmokrović, Predrag, Vasić, Aleksandra, Šašić, Rajko M., "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):591-594,
https://doi.org/10.1109/ICMEL.2006.1651036 . .

TY  - JOUR
AU  - Ramović, Rifat M.
AU  - Šašić, Rajko M.
AU  - Lukić, Petar
PY  - 2006
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/568
AB  - In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic.
PB  - National Institute of Optoelectronics
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Novel approach to the investigation of carriers' concentration in various semiconductor structures
EP  - 1423
IS  - 4
SP  - 1418
VL  - 8
UR  - https://hdl.handle.net/21.15107/rcub_technorep_877
ER  - 

@article{
author = "Ramović, Rifat M. and Šašić, Rajko M. and Lukić, Petar",
year = "2006",
abstract = "In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic.",
publisher = "National Institute of Optoelectronics",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Novel approach to the investigation of carriers' concentration in various semiconductor structures",
pages = "1423-1418",
number = "4",
volume = "8",
url = "https://hdl.handle.net/21.15107/rcub_technorep_877"
}

Ramović, R. M., Šašić, R. M.,& Lukić, P.. (2006). Novel approach to the investigation of carriers' concentration in various semiconductor structures. in Journal of Optoelectronics and Advanced Materials
National Institute of Optoelectronics., 8(4), 1418-1423.
https://hdl.handle.net/21.15107/rcub_technorep_877

Ramović RM, Šašić RM, Lukić P. Novel approach to the investigation of carriers' concentration in various semiconductor structures. in Journal of Optoelectronics and Advanced Materials. 2006;8(4):1418-1423.
https://hdl.handle.net/21.15107/rcub_technorep_877 .

Ramović, Rifat M., Šašić, Rajko M., Lukić, Petar, "Novel approach to the investigation of carriers' concentration in various semiconductor structures" in Journal of Optoelectronics and Advanced Materials, 8, no. 4 (2006):1418-1423,
https://hdl.handle.net/21.15107/rcub_technorep_877 .

TY  - JOUR
AU  - Šašić, Rajko M.
AU  - Lukić, Petar
AU  - Ramović, Rifat M.
PY  - 2006
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/567
AB  - In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET physics. In the new model, most of the parameters have a clear, physical meaning. Presented model includes HFET carrier mobility model, as well as HFET electric field model. Temperature influence is included in the model too. This model is suitable for the design and simulation of different types of HFETs. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained results, available in literature.
PB  - National Institute of Optoelectronics
T2  - Journal of Optoelectronics and Advanced Materials
T1  - New analytical HFET I-V characteristics model
EP  - 328
IS  - 1
SP  - 324
VL  - 8
UR  - https://hdl.handle.net/21.15107/rcub_technorep_882
ER  - 

@article{
author = "Šašić, Rajko M. and Lukić, Petar and Ramović, Rifat M.",
year = "2006",
abstract = "In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET physics. In the new model, most of the parameters have a clear, physical meaning. Presented model includes HFET carrier mobility model, as well as HFET electric field model. Temperature influence is included in the model too. This model is suitable for the design and simulation of different types of HFETs. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained results, available in literature.",
publisher = "National Institute of Optoelectronics",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "New analytical HFET I-V characteristics model",
pages = "328-324",
number = "1",
volume = "8",
url = "https://hdl.handle.net/21.15107/rcub_technorep_882"
}

Šašić, R. M., Lukić, P.,& Ramović, R. M.. (2006). New analytical HFET I-V characteristics model. in Journal of Optoelectronics and Advanced Materials
National Institute of Optoelectronics., 8(1), 324-328.
https://hdl.handle.net/21.15107/rcub_technorep_882

Šašić RM, Lukić P, Ramović RM. New analytical HFET I-V characteristics model. in Journal of Optoelectronics and Advanced Materials. 2006;8(1):324-328.
https://hdl.handle.net/21.15107/rcub_technorep_882 .

Šašić, Rajko M., Lukić, Petar, Ramović, Rifat M., "New analytical HFET I-V characteristics model" in Journal of Optoelectronics and Advanced Materials, 8, no. 1 (2006):324-328,
https://hdl.handle.net/21.15107/rcub_technorep_882 .

TY  - CONF
AU  - Lončar, Boris
AU  - Osmokrović, Predrag
AU  - Vasić, Aleksandra
AU  - Šašić, Rajko M.
PY  - 2006
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/4159
AB  - The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage
protection without environmental contamination.
PB  - IEEE Electron Device Society
C3  - 25th International Conference on Microelectronics 2006 MIEL (2006) : proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006
T1  - Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics
EP  - 634
SP  - 631
VL  - 2
UR  - https://hdl.handle.net/21.15107/rcub_machinery_4159
ER  - 

@conference{
author = "Lončar, Boris and Osmokrović, Predrag and Vasić, Aleksandra and Šašić, Rajko M.",
year = "2006",
abstract = "The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage
protection without environmental contamination.",
publisher = "IEEE Electron Device Society",
journal = "25th International Conference on Microelectronics 2006 MIEL (2006) : proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006",
title = "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics",
pages = "634-631",
volume = "2",
url = "https://hdl.handle.net/21.15107/rcub_machinery_4159"
}

Lončar, B., Osmokrović, P., Vasić, A.,& Šašić, R. M.. (2006). Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 25th International Conference on Microelectronics 2006 MIEL (2006) : proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006
IEEE Electron Device Society., 2, 631-634.
https://hdl.handle.net/21.15107/rcub_machinery_4159

Lončar B, Osmokrović P, Vasić A, Šašić RM. Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 25th International Conference on Microelectronics 2006 MIEL (2006) : proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006. 2006;2:631-634.
https://hdl.handle.net/21.15107/rcub_machinery_4159 .

Lončar, Boris, Osmokrović, Predrag, Vasić, Aleksandra, Šašić, Rajko M., "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics" in 25th International Conference on Microelectronics 2006 MIEL (2006) : proceedings, Belgrade, Serbia and Montenegro, 14-17 May, 2006, 2 (2006):631-634,
https://hdl.handle.net/21.15107/rcub_machinery_4159 .

TY  - BOOK
AU  - Georgijević, Veljko
AU  - Cvetić, Jovan
AU  - Stanić, Božidar
AU  - Ilić, Jelena
AU  - Marinković, Predrag
AU  - Brajović, Ljiljana
AU  - Trifković, Zoran
AU  - Jovanović, Jasmina
AU  - Nikolić, Konstantin
AU  - Kočinac, Saša
AU  - Lončar, Boris
AU  - Osmokrović, Predrag
AU  - Ostojić, Stanko
AU  - Stanković, Dragan
AU  - Šašić, Rajko
AU  - Vasić, Aleksandra
AU  - Georgijević, Julijana
AU  - Konjajev-Mihajlidi, Tatjana
AU  - Mitrinović, Mihailo
PY  - 2005
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/6867
PB  - Beograd : Građevinski fakultet
T1  - Predavanja iz fizike
UR  - https://hdl.handle.net/21.15107/rcub_machinery_6867
ER  - 

@book{
author = "Georgijević, Veljko and Cvetić, Jovan and Stanić, Božidar and Ilić, Jelena and Marinković, Predrag and Brajović, Ljiljana and Trifković, Zoran and Jovanović, Jasmina and Nikolić, Konstantin and Kočinac, Saša and Lončar, Boris and Osmokrović, Predrag and Ostojić, Stanko and Stanković, Dragan and Šašić, Rajko and Vasić, Aleksandra and Georgijević, Julijana and Konjajev-Mihajlidi, Tatjana and Mitrinović, Mihailo",
year = "2005",
publisher = "Beograd : Građevinski fakultet",
title = "Predavanja iz fizike",
url = "https://hdl.handle.net/21.15107/rcub_machinery_6867"
}

Georgijević, V., Cvetić, J., Stanić, B., Ilić, J., Marinković, P., Brajović, L., Trifković, Z., Jovanović, J., Nikolić, K., Kočinac, S., Lončar, B., Osmokrović, P., Ostojić, S., Stanković, D., Šašić, R., Vasić, A., Georgijević, J., Konjajev-Mihajlidi, T.,& Mitrinović, M.. (2005). Predavanja iz fizike. 
Beograd : Građevinski fakultet..
https://hdl.handle.net/21.15107/rcub_machinery_6867

Georgijević V, Cvetić J, Stanić B, Ilić J, Marinković P, Brajović L, Trifković Z, Jovanović J, Nikolić K, Kočinac S, Lončar B, Osmokrović P, Ostojić S, Stanković D, Šašić R, Vasić A, Georgijević J, Konjajev-Mihajlidi T, Mitrinović M. Predavanja iz fizike. 2005;.
https://hdl.handle.net/21.15107/rcub_machinery_6867 .

Georgijević, Veljko, Cvetić, Jovan, Stanić, Božidar, Ilić, Jelena, Marinković, Predrag, Brajović, Ljiljana, Trifković, Zoran, Jovanović, Jasmina, Nikolić, Konstantin, Kočinac, Saša, Lončar, Boris, Osmokrović, Predrag, Ostojić, Stanko, Stanković, Dragan, Šašić, Rajko, Vasić, Aleksandra, Georgijević, Julijana, Konjajev-Mihajlidi, Tatjana, Mitrinović, Mihailo, "Predavanja iz fizike" (2005),
https://hdl.handle.net/21.15107/rcub_machinery_6867 .

TY  - CONF
AU  - Lukić, Petar
AU  - Ramović, Rifat M.
AU  - Šašić, Rajko M.
PY  - 2005
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/550
AB  - In this paper modeling and optimization of reliability of computer network, consisted of eight computer centers which are connected in a ring, with two diagonal redundant lines, are presented. Model is developed using Markov theory for transition probabilities between states of the system. The influences of failure rate and repair rate on network reliability are investigated. Dependence of network reliability on different variants of redundant lines configurations is also analyzed, in order to find optimal solution.
PB  - IEEE Computer Society
C3  - EUROCON 2005 - The International Conference on Computer as a Tool
T1  - Modeling and optimization of reliability of one redundant computer network
EP  - 1765
SP  - 1762
VL  - II
DO  - 10.1109/eurcon.2005.1630317
ER  - 

@conference{
author = "Lukić, Petar and Ramović, Rifat M. and Šašić, Rajko M.",
year = "2005",
abstract = "In this paper modeling and optimization of reliability of computer network, consisted of eight computer centers which are connected in a ring, with two diagonal redundant lines, are presented. Model is developed using Markov theory for transition probabilities between states of the system. The influences of failure rate and repair rate on network reliability are investigated. Dependence of network reliability on different variants of redundant lines configurations is also analyzed, in order to find optimal solution.",
publisher = "IEEE Computer Society",
journal = "EUROCON 2005 - The International Conference on Computer as a Tool",
title = "Modeling and optimization of reliability of one redundant computer network",
pages = "1765-1762",
volume = "II",
doi = "10.1109/eurcon.2005.1630317"
}

Lukić, P., Ramović, R. M.,& Šašić, R. M.. (2005). Modeling and optimization of reliability of one redundant computer network. in EUROCON 2005 - The International Conference on Computer as a Tool
IEEE Computer Society., II, 1762-1765.
https://doi.org/10.1109/eurcon.2005.1630317

Lukić P, Ramović RM, Šašić RM. Modeling and optimization of reliability of one redundant computer network. in EUROCON 2005 - The International Conference on Computer as a Tool. 2005;II:1762-1765.
doi:10.1109/eurcon.2005.1630317 .

Lukić, Petar, Ramović, Rifat M., Šašić, Rajko M., "Modeling and optimization of reliability of one redundant computer network" in EUROCON 2005 - The International Conference on Computer as a Tool, II (2005):1762-1765,
https://doi.org/10.1109/eurcon.2005.1630317 . .

TY  - CONF
AU  - Lukić, Petar
AU  - Ramović, Rifat M.
AU  - Šašić, Rajko M.
PY  - 2005
UR  - https://machinery.mas.bg.ac.rs/handle/123456789/481
AB  - In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.
PB  - Trans Tech Publications Ltd
C3  - Materials Science Forum
T1  - HEMT carrier mobility analytical model
EP  - 48
SP  - 43
VL  - 494
DO  - 10.4028/www.scientific.net/MSF.494.43
ER  - 

@conference{
author = "Lukić, Petar and Ramović, Rifat M. and Šašić, Rajko M.",
year = "2005",
abstract = "In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.",
publisher = "Trans Tech Publications Ltd",
journal = "Materials Science Forum",
title = "HEMT carrier mobility analytical model",
pages = "48-43",
volume = "494",
doi = "10.4028/www.scientific.net/MSF.494.43"
}

Lukić, P., Ramović, R. M.,& Šašić, R. M.. (2005). HEMT carrier mobility analytical model. in Materials Science Forum
Trans Tech Publications Ltd., 494, 43-48.
https://doi.org/10.4028/www.scientific.net/MSF.494.43

Lukić P, Ramović RM, Šašić RM. HEMT carrier mobility analytical model. in Materials Science Forum. 2005;494:43-48.
doi:10.4028/www.scientific.net/MSF.494.43 .

Lukić, Petar, Ramović, Rifat M., Šašić, Rajko M., "HEMT carrier mobility analytical model" in Materials Science Forum, 494 (2005):43-48,
https://doi.org/10.4028/www.scientific.net/MSF.494.43 . .