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Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
dc.creator | Abood, Imhimmad | |
dc.creator | Šašić, Rajko M. | |
dc.creator | Ostojić, Stanko M. | |
dc.creator | Lukić, Petar | |
dc.date.accessioned | 2022-09-19T17:09:29Z | |
dc.date.available | 2022-09-19T17:09:29Z | |
dc.date.issued | 2013 | |
dc.identifier.issn | 0021-4922 | |
dc.identifier.uri | https://machinery.mas.bg.ac.rs/handle/123456789/1673 | |
dc.description.abstract | Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure. | en |
dc.publisher | IOP Publishing Ltd, Bristol | |
dc.relation | info:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45003/RS// | |
dc.rights | restrictedAccess | |
dc.source | Japanese Journal of Applied Physics | |
dc.title | Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy | en |
dc.type | article | |
dc.rights.license | ARR | |
dc.citation.issue | 9 | |
dc.citation.other | 52(9): - | |
dc.citation.rank | M23 | |
dc.citation.volume | 52 | |
dc.identifier.doi | 10.7567/JJAP.52.094302 | |
dc.identifier.scopus | 2-s2.0-84883889999 | |
dc.identifier.wos | 000323884300028 | |
dc.type.version | publishedVersion |