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Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC
Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics
dc.creator | Haber, Aleksandar M. | |
dc.creator | Lukić, Petar | |
dc.creator | Šašić, Rajko M. | |
dc.date.accessioned | 2022-09-19T16:05:49Z | |
dc.date.available | 2022-09-19T16:05:49Z | |
dc.date.issued | 2007 | |
dc.identifier.issn | 0354-2300 | |
dc.identifier.uri | https://machinery.mas.bg.ac.rs/handle/123456789/745 | |
dc.description.abstract | U radu je razmatran uticaj temperature na strujno-naponske karakteristike MOSFET strukture izrađene na bazi SiC, koji je analitički modelovan kroz njen uticaj na pokretljivost nosilaca. Predloženi model pored uticaja temperature obuhvata i električne, tehnološke i geometrijske parametre tranzistora. Prednost izloženog modela je, što se pored sveobuhvatnosti, odlikuje i jednostavnošću. Model je modularan, tako da se lako može testirati, menjati i eventualno unaprediti. Na bazi predstavljenog modela izvršene su simulacije. Dobijeni rezultati su saglasni sa već poznatim i dostupnim u literaturi. | sr |
dc.description.abstract | In this paper temperature dependence on current-voltage characteristics of a SiC based MOSFET structure is considered. This influence is modeled by introducing temperature impact on carrier's mobility. Proposed model includes electrical, technological and geometrical transitory parameters. The advantage of the exposed model is that it is simple and, at the same time comprehensive. The model is modular, thus it can be easily tested and eventually improved. By using the proposed model, simulations were performed. Obtained results are in a very good agreement with the already published ones. | en |
dc.publisher | Savez inženjera i tehničara Srbije, Beograd | |
dc.rights | openAccess | |
dc.source | Tehnika - Novi materijali | |
dc.subject | strujno-naponska karakteristika | sr |
dc.subject | SiC | sr |
dc.subject | pokretljivost nosilaca | sr |
dc.subject | MOSFET | sr |
dc.subject | analitički model | sr |
dc.subject | SiC | en |
dc.subject | MOSFET | en |
dc.subject | current-voltage characteristic | en |
dc.subject | carrier's mobility | en |
dc.subject | analytical model | en |
dc.title | Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC | sr |
dc.title | Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics | en |
dc.type | article | |
dc.rights.license | ARR | |
dc.citation.epage | 6 | |
dc.citation.issue | 2 | |
dc.citation.other | 16(2): 1-6 | |
dc.citation.spage | 1 | |
dc.citation.volume | 16 | |
dc.identifier.rcub | https://hdl.handle.net/21.15107/rcub_technorep_1191 | |
dc.type.version | publishedVersion |
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