Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies
Само за регистроване кориснике
2007
Аутори
Petrović, Z. Lj.Raspopović, Zoran M.
Stojanović, Vladimir D.
Jovanović, Jasmina
Malović, G.
Makabe, T.
de Urquijo, J.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
We review techniques to prepare, evaluate and apply sets of cross section and transport data for negative ions that are required for the modeling of collisional non-equilibrium plasmas used for processing of microelectronic circuits. We collect and discuss the transport coefficients and cross section sets. We have compiled data for negative ions in CF4 and CF4-related negative ions in rare gases. In addition, we consider data for F- and CF3- in rare gases. Furthermore, we analyze the cross sections of halogen negative ions in rare gases and other molecules. This is followed by the data for SF6 related ions in SF6 and in rare gases. The cross section for scattering of O- in O-2 has been derived from the transport data and used to make calculations of the transport properties. Finally we give a brief discussion of the availability of the data for H- ions in H-2. We have derived cross sections in several cases but the basic aim is to show the basic features of transport coefficients. In p...articular we discuss the need to represent properly some details such as the non-conservative nature of transport coefficients and the anisotropy of diffusion. Application of approximate theories and representations of cross sections are also discussed.
Кључне речи:
transport coefficients / swarm data / SF6 / plasma processing / plasma modeling / oxygen / negative ions / Monte Carlo / molecular ions / hydrogen / halogen ionsИзвор:
Applied Surface Science, 2007, 253, 16, 6619-6640Издавач:
- Elsevier, Amsterdam
Финансирање / пројекти:
- Физичке основе примене неравнотежних плазми у нанотехнологијама и третману материјала (RS-MESTD-MPN2006-2010-141025)
DOI: 10.1016/j.apsusc.2007.02.005
ISSN: 0169-4332
WoS: 000247156100002
Scopus: 2-s2.0-34248661268
Колекције
Институција/група
Mašinski fakultetTY - JOUR AU - Petrović, Z. Lj. AU - Raspopović, Zoran M. AU - Stojanović, Vladimir D. AU - Jovanović, Jasmina AU - Malović, G. AU - Makabe, T. AU - de Urquijo, J. PY - 2007 UR - https://machinery.mas.bg.ac.rs/handle/123456789/731 AB - We review techniques to prepare, evaluate and apply sets of cross section and transport data for negative ions that are required for the modeling of collisional non-equilibrium plasmas used for processing of microelectronic circuits. We collect and discuss the transport coefficients and cross section sets. We have compiled data for negative ions in CF4 and CF4-related negative ions in rare gases. In addition, we consider data for F- and CF3- in rare gases. Furthermore, we analyze the cross sections of halogen negative ions in rare gases and other molecules. This is followed by the data for SF6 related ions in SF6 and in rare gases. The cross section for scattering of O- in O-2 has been derived from the transport data and used to make calculations of the transport properties. Finally we give a brief discussion of the availability of the data for H- ions in H-2. We have derived cross sections in several cases but the basic aim is to show the basic features of transport coefficients. In particular we discuss the need to represent properly some details such as the non-conservative nature of transport coefficients and the anisotropy of diffusion. Application of approximate theories and representations of cross sections are also discussed. PB - Elsevier, Amsterdam T2 - Applied Surface Science T1 - Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies EP - 6640 IS - 16 SP - 6619 VL - 253 DO - 10.1016/j.apsusc.2007.02.005 ER -
@article{ author = "Petrović, Z. Lj. and Raspopović, Zoran M. and Stojanović, Vladimir D. and Jovanović, Jasmina and Malović, G. and Makabe, T. and de Urquijo, J.", year = "2007", abstract = "We review techniques to prepare, evaluate and apply sets of cross section and transport data for negative ions that are required for the modeling of collisional non-equilibrium plasmas used for processing of microelectronic circuits. We collect and discuss the transport coefficients and cross section sets. We have compiled data for negative ions in CF4 and CF4-related negative ions in rare gases. In addition, we consider data for F- and CF3- in rare gases. Furthermore, we analyze the cross sections of halogen negative ions in rare gases and other molecules. This is followed by the data for SF6 related ions in SF6 and in rare gases. The cross section for scattering of O- in O-2 has been derived from the transport data and used to make calculations of the transport properties. Finally we give a brief discussion of the availability of the data for H- ions in H-2. We have derived cross sections in several cases but the basic aim is to show the basic features of transport coefficients. In particular we discuss the need to represent properly some details such as the non-conservative nature of transport coefficients and the anisotropy of diffusion. Application of approximate theories and representations of cross sections are also discussed.", publisher = "Elsevier, Amsterdam", journal = "Applied Surface Science", title = "Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies", pages = "6640-6619", number = "16", volume = "253", doi = "10.1016/j.apsusc.2007.02.005" }
Petrović, Z. Lj., Raspopović, Z. M., Stojanović, V. D., Jovanović, J., Malović, G., Makabe, T.,& de Urquijo, J.. (2007). Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies. in Applied Surface Science Elsevier, Amsterdam., 253(16), 6619-6640. https://doi.org/10.1016/j.apsusc.2007.02.005
Petrović ZL, Raspopović ZM, Stojanović VD, Jovanović J, Malović G, Makabe T, de Urquijo J. Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies. in Applied Surface Science. 2007;253(16):6619-6640. doi:10.1016/j.apsusc.2007.02.005 .
Petrović, Z. Lj., Raspopović, Zoran M., Stojanović, Vladimir D., Jovanović, Jasmina, Malović, G., Makabe, T., de Urquijo, J., "Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies" in Applied Surface Science, 253, no. 16 (2007):6619-6640, https://doi.org/10.1016/j.apsusc.2007.02.005 . .