Conduction mechanism based model of organic field effect transistor structure
Само за регистроване кориснике
2007
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.
Кључне речи:
simulation / organic TFT model / electrical characteristics / carrier mobility modelИзвор:
Materials Science Forum, 2007, 555, 125-130Издавач:
- Trans Tech Publications Ltd
DOI: 10.4028/www.scientific.net/MSF.555.125
ISSN: 0255-5476
WoS: 000249653700019
Scopus: 2-s2.0-38349078604
Колекције
Институција/група
Mašinski fakultetTY - CONF AU - Šašić, Rajko M. AU - Lukić, Petar PY - 2007 UR - https://machinery.mas.bg.ac.rs/handle/123456789/687 AB - Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature. PB - Trans Tech Publications Ltd C3 - Materials Science Forum T1 - Conduction mechanism based model of organic field effect transistor structure EP - 130 SP - 125 VL - 555 DO - 10.4028/www.scientific.net/MSF.555.125 ER -
@conference{ author = "Šašić, Rajko M. and Lukić, Petar", year = "2007", abstract = "Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.", publisher = "Trans Tech Publications Ltd", journal = "Materials Science Forum", title = "Conduction mechanism based model of organic field effect transistor structure", pages = "130-125", volume = "555", doi = "10.4028/www.scientific.net/MSF.555.125" }
Šašić, R. M.,& Lukić, P.. (2007). Conduction mechanism based model of organic field effect transistor structure. in Materials Science Forum Trans Tech Publications Ltd., 555, 125-130. https://doi.org/10.4028/www.scientific.net/MSF.555.125
Šašić RM, Lukić P. Conduction mechanism based model of organic field effect transistor structure. in Materials Science Forum. 2007;555:125-130. doi:10.4028/www.scientific.net/MSF.555.125 .
Šašić, Rajko M., Lukić, Petar, "Conduction mechanism based model of organic field effect transistor structure" in Materials Science Forum, 555 (2007):125-130, https://doi.org/10.4028/www.scientific.net/MSF.555.125 . .