Modeling and investigation of SiGe based MOSFET structure transport characteristics
Апстракт
The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.
Кључне речи:
transport characteristics model / SiGe MOSFETИзвор:
Materials Science Forum, 2007, 555, 101-106Издавач:
- Trans Tech Publications Ltd
DOI: 10.4028/0-87849-441-3.101
ISSN: 0255-5476
WoS: 000249653700015
Scopus: 2-s2.0-38349065190
Колекције
Институција/група
Mašinski fakultetTY - CONF AU - Lukić, Petar AU - Ramović, Rifat M. AU - Šašić, Rajko M. PY - 2007 UR - https://machinery.mas.bg.ac.rs/handle/123456789/680 AB - The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed. PB - Trans Tech Publications Ltd C3 - Materials Science Forum T1 - Modeling and investigation of SiGe based MOSFET structure transport characteristics EP - 106 SP - 101 VL - 555 DO - 10.4028/0-87849-441-3.101 ER -
@conference{ author = "Lukić, Petar and Ramović, Rifat M. and Šašić, Rajko M.", year = "2007", abstract = "The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.", publisher = "Trans Tech Publications Ltd", journal = "Materials Science Forum", title = "Modeling and investigation of SiGe based MOSFET structure transport characteristics", pages = "106-101", volume = "555", doi = "10.4028/0-87849-441-3.101" }
Lukić, P., Ramović, R. M.,& Šašić, R. M.. (2007). Modeling and investigation of SiGe based MOSFET structure transport characteristics. in Materials Science Forum Trans Tech Publications Ltd., 555, 101-106. https://doi.org/10.4028/0-87849-441-3.101
Lukić P, Ramović RM, Šašić RM. Modeling and investigation of SiGe based MOSFET structure transport characteristics. in Materials Science Forum. 2007;555:101-106. doi:10.4028/0-87849-441-3.101 .
Lukić, Petar, Ramović, Rifat M., Šašić, Rajko M., "Modeling and investigation of SiGe based MOSFET structure transport characteristics" in Materials Science Forum, 555 (2007):101-106, https://doi.org/10.4028/0-87849-441-3.101 . .