Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method
Само за регистроване кориснике
2006
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.
Кључне речи:
semiconductor materials / radiation / MOSFET / Monte Carlo method / FOTELPИзвор:
Recent Developments in Advanced Materials and Processes, 2006, 518, 361-365Издавач:
- Trans Tech Publications Ltd, Durnten-Zurich
DOI: 10.4028/www.scientific.net/MSF.518.361
ISSN: 0255-5476
WoS: 000239351800060
Scopus: 2-s2.0-37849027770
Колекције
Институција/група
Mašinski fakultetTY - JOUR AU - Stanković, S. J. AU - Ilić, Radovan D. AU - Petrović, M. AU - Lončar, B. AU - Vasić, Aleksandra PY - 2006 UR - https://machinery.mas.bg.ac.rs/handle/123456789/643 AB - The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data. PB - Trans Tech Publications Ltd, Durnten-Zurich T2 - Recent Developments in Advanced Materials and Processes T1 - Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method EP - 365 SP - 361 VL - 518 DO - 10.4028/www.scientific.net/MSF.518.361 ER -
@article{ author = "Stanković, S. J. and Ilić, Radovan D. and Petrović, M. and Lončar, B. and Vasić, Aleksandra", year = "2006", abstract = "The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.", publisher = "Trans Tech Publications Ltd, Durnten-Zurich", journal = "Recent Developments in Advanced Materials and Processes", title = "Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method", pages = "365-361", volume = "518", doi = "10.4028/www.scientific.net/MSF.518.361" }
Stanković, S. J., Ilić, R. D., Petrović, M., Lončar, B.,& Vasić, A.. (2006). Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method. in Recent Developments in Advanced Materials and Processes Trans Tech Publications Ltd, Durnten-Zurich., 518, 361-365. https://doi.org/10.4028/www.scientific.net/MSF.518.361
Stanković SJ, Ilić RD, Petrović M, Lončar B, Vasić A. Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method. in Recent Developments in Advanced Materials and Processes. 2006;518:361-365. doi:10.4028/www.scientific.net/MSF.518.361 .
Stanković, S. J., Ilić, Radovan D., Petrović, M., Lončar, B., Vasić, Aleksandra, "Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method" in Recent Developments in Advanced Materials and Processes, 518 (2006):361-365, https://doi.org/10.4028/www.scientific.net/MSF.518.361 . .