A new threshold voltage analytical model of strained Si/SiGe MOSFET
Само за регистроване кориснике
2006
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones.
Извор:
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, 472-475Издавач:
- IEEE Computer Society
Колекције
Институција/група
Mašinski fakultetTY - CONF AU - Lukić, Petar AU - Ramović, Rifat M. AU - Šašić, Rajko M. PY - 2006 UR - https://machinery.mas.bg.ac.rs/handle/123456789/571 AB - In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones. PB - IEEE Computer Society C3 - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings T1 - A new threshold voltage analytical model of strained Si/SiGe MOSFET EP - 475 SP - 472 DO - 10.1109/ICMEL.2006.1651004 ER -
@conference{ author = "Lukić, Petar and Ramović, Rifat M. and Šašić, Rajko M.", year = "2006", abstract = "In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones.", publisher = "IEEE Computer Society", journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings", title = "A new threshold voltage analytical model of strained Si/SiGe MOSFET", pages = "475-472", doi = "10.1109/ICMEL.2006.1651004" }
Lukić, P., Ramović, R. M.,& Šašić, R. M.. (2006). A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings IEEE Computer Society., 472-475. https://doi.org/10.1109/ICMEL.2006.1651004
Lukić P, Ramović RM, Šašić RM. A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:472-475. doi:10.1109/ICMEL.2006.1651004 .
Lukić, Petar, Ramović, Rifat M., Šašić, Rajko M., "A new threshold voltage analytical model of strained Si/SiGe MOSFET" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):472-475, https://doi.org/10.1109/ICMEL.2006.1651004 . .