Novel approach to the investigation of carriers' concentration in various semiconductor structures

Abstract

In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic.