HEMT carrier mobility analytical model
Само за регистроване кориснике
2005
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.
Кључне речи:
High Electron Mobility Transistor (HEMT) / carrier mobility modelИзвор:
Materials Science Forum, 2005, 494, 43-48Издавач:
- Trans Tech Publications Ltd
DOI: 10.4028/www.scientific.net/MSF.494.43
ISSN: 0255-5476
WoS: 000230985800008
Scopus: 2-s2.0-22544444082
Колекције
Институција/група
Mašinski fakultetTY - CONF AU - Lukić, Petar AU - Ramović, Rifat M. AU - Šašić, Rajko M. PY - 2005 UR - https://machinery.mas.bg.ac.rs/handle/123456789/481 AB - In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature. PB - Trans Tech Publications Ltd C3 - Materials Science Forum T1 - HEMT carrier mobility analytical model EP - 48 SP - 43 VL - 494 DO - 10.4028/www.scientific.net/MSF.494.43 ER -
@conference{ author = "Lukić, Petar and Ramović, Rifat M. and Šašić, Rajko M.", year = "2005", abstract = "In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.", publisher = "Trans Tech Publications Ltd", journal = "Materials Science Forum", title = "HEMT carrier mobility analytical model", pages = "48-43", volume = "494", doi = "10.4028/www.scientific.net/MSF.494.43" }
Lukić, P., Ramović, R. M.,& Šašić, R. M.. (2005). HEMT carrier mobility analytical model. in Materials Science Forum Trans Tech Publications Ltd., 494, 43-48. https://doi.org/10.4028/www.scientific.net/MSF.494.43
Lukić P, Ramović RM, Šašić RM. HEMT carrier mobility analytical model. in Materials Science Forum. 2005;494:43-48. doi:10.4028/www.scientific.net/MSF.494.43 .
Lukić, Petar, Ramović, Rifat M., Šašić, Rajko M., "HEMT carrier mobility analytical model" in Materials Science Forum, 494 (2005):43-48, https://doi.org/10.4028/www.scientific.net/MSF.494.43 . .