Surface density analytical model of two-dimensional electron gas in HEMT structures
Само за регистроване кориснике
2004
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper a surface density analytical model of Two-Dimensional Electron Gas (2DEG) in High Electron Mobility Transistor (HEMT) under gate voltage control is presented. In the model, an approximation of triangular potential well is used. The results obtained by this model are in good agreement with the experimentally obtained results, and the results of comprehensive numerical simulations of HEMT devices, which are made of different materials, including HEMT devices with strained crystal lattice. The model also gives relatively good results for surface density 2DEG in AlGaN/GaN structures with piezo-electric effect, which has a great influence on the density. On the basis of the model that is presented, the simulations were performed and obtained results are given graphically.
Кључне речи:
two-dimensional electron gas (2DEG) density / semiconductor devices modeling / High Electron Mobility Transistor (HEMT) / heterostructuresИзвор:
Progress in Advanced Materials and Processes, 2004, 453-454, 27-32Издавач:
- Trans Tech Publications Ltd, Durnten-Zurich
DOI: 10.4028/www.scientific.net/MSF.453-454.27
ISSN: 0255-5476
WoS: 000221535700005
Scopus: 2-s2.0-3142664063
Колекције
Институција/група
Mašinski fakultetTY - JOUR AU - Ramović, Rifat M. AU - Lukić, Petar PY - 2004 UR - https://machinery.mas.bg.ac.rs/handle/123456789/464 AB - In this paper a surface density analytical model of Two-Dimensional Electron Gas (2DEG) in High Electron Mobility Transistor (HEMT) under gate voltage control is presented. In the model, an approximation of triangular potential well is used. The results obtained by this model are in good agreement with the experimentally obtained results, and the results of comprehensive numerical simulations of HEMT devices, which are made of different materials, including HEMT devices with strained crystal lattice. The model also gives relatively good results for surface density 2DEG in AlGaN/GaN structures with piezo-electric effect, which has a great influence on the density. On the basis of the model that is presented, the simulations were performed and obtained results are given graphically. PB - Trans Tech Publications Ltd, Durnten-Zurich T2 - Progress in Advanced Materials and Processes T1 - Surface density analytical model of two-dimensional electron gas in HEMT structures EP - 32 SP - 27 VL - 453-454 DO - 10.4028/www.scientific.net/MSF.453-454.27 ER -
@article{ author = "Ramović, Rifat M. and Lukić, Petar", year = "2004", abstract = "In this paper a surface density analytical model of Two-Dimensional Electron Gas (2DEG) in High Electron Mobility Transistor (HEMT) under gate voltage control is presented. In the model, an approximation of triangular potential well is used. The results obtained by this model are in good agreement with the experimentally obtained results, and the results of comprehensive numerical simulations of HEMT devices, which are made of different materials, including HEMT devices with strained crystal lattice. The model also gives relatively good results for surface density 2DEG in AlGaN/GaN structures with piezo-electric effect, which has a great influence on the density. On the basis of the model that is presented, the simulations were performed and obtained results are given graphically.", publisher = "Trans Tech Publications Ltd, Durnten-Zurich", journal = "Progress in Advanced Materials and Processes", title = "Surface density analytical model of two-dimensional electron gas in HEMT structures", pages = "32-27", volume = "453-454", doi = "10.4028/www.scientific.net/MSF.453-454.27" }
Ramović, R. M.,& Lukić, P.. (2004). Surface density analytical model of two-dimensional electron gas in HEMT structures. in Progress in Advanced Materials and Processes Trans Tech Publications Ltd, Durnten-Zurich., 453-454, 27-32. https://doi.org/10.4028/www.scientific.net/MSF.453-454.27
Ramović RM, Lukić P. Surface density analytical model of two-dimensional electron gas in HEMT structures. in Progress in Advanced Materials and Processes. 2004;453-454:27-32. doi:10.4028/www.scientific.net/MSF.453-454.27 .
Ramović, Rifat M., Lukić, Petar, "Surface density analytical model of two-dimensional electron gas in HEMT structures" in Progress in Advanced Materials and Processes, 453-454 (2004):27-32, https://doi.org/10.4028/www.scientific.net/MSF.453-454.27 . .