Comparison of Gamma Ray Effects on EPROMs and E2PROMs
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This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than E2PROMs. More over, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.
Кључне речи:
EPROM / E2PROM / gamma rays / radiation hardnessИзвор:
Nuclear Technology & Radiation Protection, 2009, 24, 1, 61-67Издавач:
- Beograd : Institut za nuklearne nauke Vinča
Финансирање / пројекти:
- Физика електромагнетне и радијационе компатабилности електротехничких материјала и компонената (RS-MESTD-MPN2006-2010-141046)
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Институција/група
Mašinski fakultetTY - JOUR AU - Vujisić, Miloš AU - Stanković, Koviljka AU - Vasić, Aleksandra PY - 2009 UR - https://machinery.mas.bg.ac.rs/handle/123456789/4408 AB - This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than E2PROMs. More over, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure. PB - Beograd : Institut za nuklearne nauke Vinča T2 - Nuclear Technology & Radiation Protection T1 - Comparison of Gamma Ray Effects on EPROMs and E2PROMs EP - 67 IS - 1 SP - 61 VL - 24 DO - 10.2298/NTRP0901061V ER -
@article{ author = "Vujisić, Miloš and Stanković, Koviljka and Vasić, Aleksandra", year = "2009", abstract = "This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than E2PROMs. More over, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.", publisher = "Beograd : Institut za nuklearne nauke Vinča", journal = "Nuclear Technology & Radiation Protection", title = "Comparison of Gamma Ray Effects on EPROMs and E2PROMs", pages = "67-61", number = "1", volume = "24", doi = "10.2298/NTRP0901061V" }
Vujisić, M., Stanković, K.,& Vasić, A.. (2009). Comparison of Gamma Ray Effects on EPROMs and E2PROMs. in Nuclear Technology & Radiation Protection Beograd : Institut za nuklearne nauke Vinča., 24(1), 61-67. https://doi.org/10.2298/NTRP0901061V
Vujisić M, Stanković K, Vasić A. Comparison of Gamma Ray Effects on EPROMs and E2PROMs. in Nuclear Technology & Radiation Protection. 2009;24(1):61-67. doi:10.2298/NTRP0901061V .
Vujisić, Miloš, Stanković, Koviljka, Vasić, Aleksandra, "Comparison of Gamma Ray Effects on EPROMs and E2PROMs" in Nuclear Technology & Radiation Protection, 24, no. 1 (2009):61-67, https://doi.org/10.2298/NTRP0901061V . .