The Impact of successive gamma and neutron irradiation on sharacsteristics of PIN photodetectors and phototransistors
Апстракт
The aim of this paper is to explore the impact of increased gamma and neutron radiation
on the PIN photodiodes and phototransistors and their output characteristics. Special
attention was paid to the successive impact of gamma and neutron radiation when the
components were located in the field of gamma radiation and after that in the field of
neutron radiation. The impact of successive irradiation was compared with the influence
of gamma and neutron radiation when they appear individually. An important result of
this research is the observation that neutron irradiation of photovoltaic detectors, applied
after gamma irradiation, leading to partial reparations of distorted semiconductor
structure and increasing disrupted output characteristics (photocurrent, spectral
response). Monte Carlo simulation of gamma photons transfer through the crystal lattice
of the semiconductor has been shown that the cause of such effect of neutron radiation is
a large number of divacancies cause...d by successive operation of the previous gamma
radiation and the neutron radiation itself. Divacancies have created the basis for increased
generation of charge carriers by direct transfer (tunneling) of carriers through the traps
(recombination centers). This is so called intercenter charge transfer.
Кључне речи:
photovoltaic detectors / gamma and neutron radiation / divacancies / intercenter charge transfer / Monte Carlo simulationИзвор:
Radiation Effects on Materials, 2016, chapter 3, 69-92Издавач:
- InTech Europe
Финансирање / пројекти:
- Физички и функционални ефекти интеракције зрачења са електротехничким и биолошким системима (RS-MESTD-Basic Research (BR or ON)-171007)
Колекције
Институција/група
Mašinski fakultetTY - CHAP AU - Nikolić, Dejan AU - Vasić-Milovanović, Aleksandra PY - 2016 UR - https://machinery.mas.bg.ac.rs/handle/123456789/4165 AB - The aim of this paper is to explore the impact of increased gamma and neutron radiation on the PIN photodiodes and phototransistors and their output characteristics. Special attention was paid to the successive impact of gamma and neutron radiation when the components were located in the field of gamma radiation and after that in the field of neutron radiation. The impact of successive irradiation was compared with the influence of gamma and neutron radiation when they appear individually. An important result of this research is the observation that neutron irradiation of photovoltaic detectors, applied after gamma irradiation, leading to partial reparations of distorted semiconductor structure and increasing disrupted output characteristics (photocurrent, spectral response). Monte Carlo simulation of gamma photons transfer through the crystal lattice of the semiconductor has been shown that the cause of such effect of neutron radiation is a large number of divacancies caused by successive operation of the previous gamma radiation and the neutron radiation itself. Divacancies have created the basis for increased generation of charge carriers by direct transfer (tunneling) of carriers through the traps (recombination centers). This is so called intercenter charge transfer. PB - InTech Europe T2 - Radiation Effects on Materials T1 - The Impact of successive gamma and neutron irradiation on sharacsteristics of PIN photodetectors and phototransistors EP - 92 IS - chapter 3 SP - 69 DO - 10.5772/62756 ER -
@inbook{ author = "Nikolić, Dejan and Vasić-Milovanović, Aleksandra", year = "2016", abstract = "The aim of this paper is to explore the impact of increased gamma and neutron radiation on the PIN photodiodes and phototransistors and their output characteristics. Special attention was paid to the successive impact of gamma and neutron radiation when the components were located in the field of gamma radiation and after that in the field of neutron radiation. The impact of successive irradiation was compared with the influence of gamma and neutron radiation when they appear individually. An important result of this research is the observation that neutron irradiation of photovoltaic detectors, applied after gamma irradiation, leading to partial reparations of distorted semiconductor structure and increasing disrupted output characteristics (photocurrent, spectral response). Monte Carlo simulation of gamma photons transfer through the crystal lattice of the semiconductor has been shown that the cause of such effect of neutron radiation is a large number of divacancies caused by successive operation of the previous gamma radiation and the neutron radiation itself. Divacancies have created the basis for increased generation of charge carriers by direct transfer (tunneling) of carriers through the traps (recombination centers). This is so called intercenter charge transfer.", publisher = "InTech Europe", journal = "Radiation Effects on Materials", booktitle = "The Impact of successive gamma and neutron irradiation on sharacsteristics of PIN photodetectors and phototransistors", pages = "92-69", number = "chapter 3", doi = "10.5772/62756" }
Nikolić, D.,& Vasić-Milovanović, A.. (2016). The Impact of successive gamma and neutron irradiation on sharacsteristics of PIN photodetectors and phototransistors. in Radiation Effects on Materials InTech Europe.(chapter 3), 69-92. https://doi.org/10.5772/62756
Nikolić D, Vasić-Milovanović A. The Impact of successive gamma and neutron irradiation on sharacsteristics of PIN photodetectors and phototransistors. in Radiation Effects on Materials. 2016;(chapter 3):69-92. doi:10.5772/62756 .
Nikolić, Dejan, Vasić-Milovanović, Aleksandra, "The Impact of successive gamma and neutron irradiation on sharacsteristics of PIN photodetectors and phototransistors" in Radiation Effects on Materials, no. chapter 3 (2016):69-92, https://doi.org/10.5772/62756 . .