Improvement possibilities of the I-V characteristics of PIN photodiodes damaged by gamma irradiation
Abstract
This paper presents the behavior of PIN photodiodes after combined gamma and neutron irradiation. Different types of PIN photodiodes have been exposed first to gamma and then to
neutron irradiation. I-V characteristics (current dependence on voltage) of photodiodes have
been measured after each of these irradiations. It has been noted that the photocurrent level
after the neutron irradiation is higher than before it, which is not consistent with the current
theories about the effects of neutron radiation on semiconductors. In order to explain this behavior of the photodiodes, the Monte Carlo simulation of photon transport through the material has been used. It is proposed that a possible cause for current enhancement are defects in
semiconductor created by gamma irradiation and effects of neutron irradiation on these defects. The results can be explained by an intercentre transfer of charge between defects in close
proximity to each other. The aim of this paper is to investigate ...the improvement possibilities
of the I-V characteristics of PIN photodiodes, and photodetectors in general, damaged by
gamma irradiation.
Keywords:
PIN photodiode / gamma irradiation / neutron irradiation / I-V characteristic / Monte Carlo simulationSource:
Nuclear Technology & Radiation Protection, 2013, 28, 1, 84-91Publisher:
- Univerzitet u Beogradu - Institut za nuklearne nauke Vinča, Beograd
Funding / projects:
- Physical and functional effects of radiation interaction with electrotechnical and biological systems (RS-MESTD-Basic Research (BR or ON)-171007)
DOI: 10.2298/NTRP1301084N
ISSN: 1451-3994
WoS: 000317709800011
Scopus: 2-s2.0-84877917015
Collections
Institution/Community
Mašinski fakultetTY - JOUR AU - Nikolić, Dejan AU - Vasić-Milovanović, Aleksandra AU - Lazarević, Đorđe AU - Obrenović, Marija PY - 2013 UR - https://machinery.mas.bg.ac.rs/handle/123456789/4142 AB - This paper presents the behavior of PIN photodiodes after combined gamma and neutron irradiation. Different types of PIN photodiodes have been exposed first to gamma and then to neutron irradiation. I-V characteristics (current dependence on voltage) of photodiodes have been measured after each of these irradiations. It has been noted that the photocurrent level after the neutron irradiation is higher than before it, which is not consistent with the current theories about the effects of neutron radiation on semiconductors. In order to explain this behavior of the photodiodes, the Monte Carlo simulation of photon transport through the material has been used. It is proposed that a possible cause for current enhancement are defects in semiconductor created by gamma irradiation and effects of neutron irradiation on these defects. The results can be explained by an intercentre transfer of charge between defects in close proximity to each other. The aim of this paper is to investigate the improvement possibilities of the I-V characteristics of PIN photodiodes, and photodetectors in general, damaged by gamma irradiation. PB - Univerzitet u Beogradu - Institut za nuklearne nauke Vinča, Beograd T2 - Nuclear Technology & Radiation Protection T1 - Improvement possibilities of the I-V characteristics of PIN photodiodes damaged by gamma irradiation EP - 91 IS - 1 SP - 84 VL - 28 DO - 10.2298/NTRP1301084N ER -
@article{ author = "Nikolić, Dejan and Vasić-Milovanović, Aleksandra and Lazarević, Đorđe and Obrenović, Marija", year = "2013", abstract = "This paper presents the behavior of PIN photodiodes after combined gamma and neutron irradiation. Different types of PIN photodiodes have been exposed first to gamma and then to neutron irradiation. I-V characteristics (current dependence on voltage) of photodiodes have been measured after each of these irradiations. It has been noted that the photocurrent level after the neutron irradiation is higher than before it, which is not consistent with the current theories about the effects of neutron radiation on semiconductors. In order to explain this behavior of the photodiodes, the Monte Carlo simulation of photon transport through the material has been used. It is proposed that a possible cause for current enhancement are defects in semiconductor created by gamma irradiation and effects of neutron irradiation on these defects. The results can be explained by an intercentre transfer of charge between defects in close proximity to each other. The aim of this paper is to investigate the improvement possibilities of the I-V characteristics of PIN photodiodes, and photodetectors in general, damaged by gamma irradiation.", publisher = "Univerzitet u Beogradu - Institut za nuklearne nauke Vinča, Beograd", journal = "Nuclear Technology & Radiation Protection", title = "Improvement possibilities of the I-V characteristics of PIN photodiodes damaged by gamma irradiation", pages = "91-84", number = "1", volume = "28", doi = "10.2298/NTRP1301084N" }
Nikolić, D., Vasić-Milovanović, A., Lazarević, Đ.,& Obrenović, M.. (2013). Improvement possibilities of the I-V characteristics of PIN photodiodes damaged by gamma irradiation. in Nuclear Technology & Radiation Protection Univerzitet u Beogradu - Institut za nuklearne nauke Vinča, Beograd., 28(1), 84-91. https://doi.org/10.2298/NTRP1301084N
Nikolić D, Vasić-Milovanović A, Lazarević Đ, Obrenović M. Improvement possibilities of the I-V characteristics of PIN photodiodes damaged by gamma irradiation. in Nuclear Technology & Radiation Protection. 2013;28(1):84-91. doi:10.2298/NTRP1301084N .
Nikolić, Dejan, Vasić-Milovanović, Aleksandra, Lazarević, Đorđe, Obrenović, Marija, "Improvement possibilities of the I-V characteristics of PIN photodiodes damaged by gamma irradiation" in Nuclear Technology & Radiation Protection, 28, no. 1 (2013):84-91, https://doi.org/10.2298/NTRP1301084N . .