Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution

dc.creator	Ramović, Rifat M.
dc.creator	Krijestorac, S
dc.creator	Lukić, Petar
dc.date.accessioned	2022-09-19T15:40:52Z
dc.date.available	2022-09-19T15:40:52Z
dc.date.issued	2004
dc.identifier.uri	https://machinery.mas.bg.ac.rs/handle/123456789/398
dc.description.abstract	In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization.	en
dc.publisher	Institute of Electrical and Electronics Engineers Inc.
dc.rights	restrictedAccess
dc.source	Proceedings of the International Conference on Microelectronics
dc.title	Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution	en
dc.type	conferenceObject
dc.rights.license	ARR
dc.citation.epage	310
dc.citation.other	24 I: 307-310
dc.citation.spage	307
dc.citation.volume	24 I
dc.identifier.rcub	https://hdl.handle.net/21.15107/rcub_machinery_398
dc.identifier.scopus	2-s2.0-3142777697
dc.identifier.wos	000222219300060
dc.type.version	publishedVersion

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