Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution
Апстракт
In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization.
Извор:
Proceedings of the International Conference on Microelectronics, 2004, 24 I, 307-310Издавач:
- Institute of Electrical and Electronics Engineers Inc.
Колекције
Институција/група
Mašinski fakultetTY - CONF AU - Ramović, Rifat M. AU - Krijestorac, S AU - Lukić, Petar PY - 2004 UR - https://machinery.mas.bg.ac.rs/handle/123456789/398 AB - In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization. PB - Institute of Electrical and Electronics Engineers Inc. C3 - Proceedings of the International Conference on Microelectronics T1 - Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution EP - 310 SP - 307 VL - 24 I UR - https://hdl.handle.net/21.15107/rcub_machinery_398 ER -
@conference{ author = "Ramović, Rifat M. and Krijestorac, S and Lukić, Petar", year = "2004", abstract = "In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization.", publisher = "Institute of Electrical and Electronics Engineers Inc.", journal = "Proceedings of the International Conference on Microelectronics", title = "Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution", pages = "310-307", volume = "24 I", url = "https://hdl.handle.net/21.15107/rcub_machinery_398" }
Ramović, R. M., Krijestorac, S.,& Lukić, P.. (2004). Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution. in Proceedings of the International Conference on Microelectronics Institute of Electrical and Electronics Engineers Inc.., 24 I, 307-310. https://hdl.handle.net/21.15107/rcub_machinery_398
Ramović RM, Krijestorac S, Lukić P. Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution. in Proceedings of the International Conference on Microelectronics. 2004;24 I:307-310. https://hdl.handle.net/21.15107/rcub_machinery_398 .
Ramović, Rifat M., Krijestorac, S, Lukić, Petar, "Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution" in Proceedings of the International Conference on Microelectronics, 24 I (2004):307-310, https://hdl.handle.net/21.15107/rcub_machinery_398 .