Efekti radikala u modeliranju plazmi korišćenih za nagrizanje u mikroelektronici

Abstract

Plazma nagrizanje predstavlja jedan od kritičnih koraka u izradi integrisanih kola. Dalja optimizacija plazma uređaja je potrebna jer nove generacije u tehnologiji zahtevaju različitu plazma hemiju. U ovom radu bavimo se uticajem radikala na plazma karakteristike, što je često zanemarivano u plazma modelima. Radikali dominiraju zahvatom elektrona čineći da je bazna smeša za nagrizanje slabo elektronegativna, a oni takođe modifikuju brzinu drifta preko modifikovanog balansa momenta. Mi smo koristili numerička rešenja Bolcmanove jednačine i Monte Karlo simulacije (MCS) za određivanje transportnih koeficijenata elektrona.

Plasma etching represents one of the critical steps in manufacturing of integrated circuits. Further optimization of plasma equipment is needed since new generations in technology require different plasma chemistry. In this paper, we will study the influence of radicals on the plasma characteristics, since it was often neglected in plasma models. The radicals dominate attachment of electrons as the basic etching mixture is weakly electronegative and they also affect the drift velocity through modified momentum balance. We have used numerical solutions to the Boltzmann equation and Monte Carlo simulations (MCS) to determine the transport coefficients of electrons.