Efekti radikala u modeliranju plazmi korišćenih za nagrizanje u mikroelektronici
Modeling of the effect of radicals on plasmas used for etching in microelectronics
Апстракт
Plazma nagrizanje predstavlja jedan od kritičnih koraka u izradi integrisanih kola. Dalja optimizacija plazma uređaja je potrebna jer nove generacije u tehnologiji zahtevaju različitu plazma hemiju. U ovom radu bavimo se uticajem radikala na plazma karakteristike, što je često zanemarivano u plazma modelima. Radikali dominiraju zahvatom elektrona čineći da je bazna smeša za nagrizanje slabo elektronegativna, a oni takođe modifikuju brzinu drifta preko modifikovanog balansa momenta. Mi smo koristili numerička rešenja Bolcmanove jednačine i Monte Karlo simulacije (MCS) za određivanje transportnih koeficijenata elektrona.
Plasma etching represents one of the critical steps in manufacturing of integrated circuits. Further optimization of plasma equipment is needed since new generations in technology require different plasma chemistry. In this paper, we will study the influence of radicals on the plasma characteristics, since it was often neglected in plasma models. The radicals dominate attachment of electrons as the basic etching mixture is weakly electronegative and they also affect the drift velocity through modified momentum balance. We have used numerical solutions to the Boltzmann equation and Monte Carlo simulations (MCS) to determine the transport coefficients of electrons.
Кључне речи:
transport coefficients / Monte Carlo code / Global model / CF4Извор:
FME Transactions, 2016, 44, 1, 105-108Издавач:
- Univerzitet u Beogradu - Mašinski fakultet, Beograd
Финансирање / пројекти:
- Фундаментални процеси и примене транспорта честица у неравнотежним плазмама, траповима и наноструктурама (RS-MESTD-Basic Research (BR or ON)-171037)
- Bilateral project 'Meritve plazemskih parametrov v kapacitivnih in induktivnih RF razelektritvah' (410011)
Колекције
Институција/група
Mašinski fakultetTY - JOUR AU - Nikitović, Željka D. AU - Jovanović, Jasmina AU - Cvelbar, Uroš AU - Mozetič, Miran AU - Stojanović, Vladimir D. PY - 2016 UR - https://machinery.mas.bg.ac.rs/handle/123456789/2361 AB - Plazma nagrizanje predstavlja jedan od kritičnih koraka u izradi integrisanih kola. Dalja optimizacija plazma uređaja je potrebna jer nove generacije u tehnologiji zahtevaju različitu plazma hemiju. U ovom radu bavimo se uticajem radikala na plazma karakteristike, što je često zanemarivano u plazma modelima. Radikali dominiraju zahvatom elektrona čineći da je bazna smeša za nagrizanje slabo elektronegativna, a oni takođe modifikuju brzinu drifta preko modifikovanog balansa momenta. Mi smo koristili numerička rešenja Bolcmanove jednačine i Monte Karlo simulacije (MCS) za određivanje transportnih koeficijenata elektrona. AB - Plasma etching represents one of the critical steps in manufacturing of integrated circuits. Further optimization of plasma equipment is needed since new generations in technology require different plasma chemistry. In this paper, we will study the influence of radicals on the plasma characteristics, since it was often neglected in plasma models. The radicals dominate attachment of electrons as the basic etching mixture is weakly electronegative and they also affect the drift velocity through modified momentum balance. We have used numerical solutions to the Boltzmann equation and Monte Carlo simulations (MCS) to determine the transport coefficients of electrons. PB - Univerzitet u Beogradu - Mašinski fakultet, Beograd T2 - FME Transactions T1 - Efekti radikala u modeliranju plazmi korišćenih za nagrizanje u mikroelektronici T1 - Modeling of the effect of radicals on plasmas used for etching in microelectronics EP - 108 IS - 1 SP - 105 VL - 44 DO - 10.5937/fmet1601106N ER -
@article{ author = "Nikitović, Željka D. and Jovanović, Jasmina and Cvelbar, Uroš and Mozetič, Miran and Stojanović, Vladimir D.", year = "2016", abstract = "Plazma nagrizanje predstavlja jedan od kritičnih koraka u izradi integrisanih kola. Dalja optimizacija plazma uređaja je potrebna jer nove generacije u tehnologiji zahtevaju različitu plazma hemiju. U ovom radu bavimo se uticajem radikala na plazma karakteristike, što je često zanemarivano u plazma modelima. Radikali dominiraju zahvatom elektrona čineći da je bazna smeša za nagrizanje slabo elektronegativna, a oni takođe modifikuju brzinu drifta preko modifikovanog balansa momenta. Mi smo koristili numerička rešenja Bolcmanove jednačine i Monte Karlo simulacije (MCS) za određivanje transportnih koeficijenata elektrona., Plasma etching represents one of the critical steps in manufacturing of integrated circuits. Further optimization of plasma equipment is needed since new generations in technology require different plasma chemistry. In this paper, we will study the influence of radicals on the plasma characteristics, since it was often neglected in plasma models. The radicals dominate attachment of electrons as the basic etching mixture is weakly electronegative and they also affect the drift velocity through modified momentum balance. We have used numerical solutions to the Boltzmann equation and Monte Carlo simulations (MCS) to determine the transport coefficients of electrons.", publisher = "Univerzitet u Beogradu - Mašinski fakultet, Beograd", journal = "FME Transactions", title = "Efekti radikala u modeliranju plazmi korišćenih za nagrizanje u mikroelektronici, Modeling of the effect of radicals on plasmas used for etching in microelectronics", pages = "108-105", number = "1", volume = "44", doi = "10.5937/fmet1601106N" }
Nikitović, Ž. D., Jovanović, J., Cvelbar, U., Mozetič, M.,& Stojanović, V. D.. (2016). Efekti radikala u modeliranju plazmi korišćenih za nagrizanje u mikroelektronici. in FME Transactions Univerzitet u Beogradu - Mašinski fakultet, Beograd., 44(1), 105-108. https://doi.org/10.5937/fmet1601106N
Nikitović ŽD, Jovanović J, Cvelbar U, Mozetič M, Stojanović VD. Efekti radikala u modeliranju plazmi korišćenih za nagrizanje u mikroelektronici. in FME Transactions. 2016;44(1):105-108. doi:10.5937/fmet1601106N .
Nikitović, Željka D., Jovanović, Jasmina, Cvelbar, Uroš, Mozetič, Miran, Stojanović, Vladimir D., "Efekti radikala u modeliranju plazmi korišćenih za nagrizanje u mikroelektronici" in FME Transactions, 44, no. 1 (2016):105-108, https://doi.org/10.5937/fmet1601106N . .