Modeling of carriers mobility impact on CNT FIET current-voltage characteristics
Само за регистроване кориснике
2014
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are presented. The new model of CNT FET current-voltage characteristics is developed and presented. In the model, capacitances of all interfaces are included. Special segment of this model is carrier's mobility model. Modeling of carrier's mobility is exposed. Two different carriers' mobility models are presented: analytical model that is developed and proposed and empirical model that is introduced. All models are modular and relatively simple. The results obtained by using proposed models are in very good agreement with already known ones.
Кључне речи:
Current - voltage characteristics / CNT FET / Carriers mobility / Analytical modelИзвор:
Journal of Optoelectronics and Advanced Materials, 2014, 16, 11-12, 1418-1424Издавач:
- National Institute of Optoelectronics
Финансирање / пројекти:
- Оптоелектронски нанодимензиони системи - пут ка примени (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45003)
Колекције
Институција/група
Mašinski fakultetTY - JOUR AU - Lukić, Petar AU - Šašić, Rajko M. PY - 2014 UR - https://machinery.mas.bg.ac.rs/handle/123456789/1954 AB - In this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are presented. The new model of CNT FET current-voltage characteristics is developed and presented. In the model, capacitances of all interfaces are included. Special segment of this model is carrier's mobility model. Modeling of carrier's mobility is exposed. Two different carriers' mobility models are presented: analytical model that is developed and proposed and empirical model that is introduced. All models are modular and relatively simple. The results obtained by using proposed models are in very good agreement with already known ones. PB - National Institute of Optoelectronics T2 - Journal of Optoelectronics and Advanced Materials T1 - Modeling of carriers mobility impact on CNT FIET current-voltage characteristics EP - 1424 IS - 11-12 SP - 1418 VL - 16 UR - https://hdl.handle.net/21.15107/rcub_technorep_2564 ER -
@article{ author = "Lukić, Petar and Šašić, Rajko M.", year = "2014", abstract = "In this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are presented. The new model of CNT FET current-voltage characteristics is developed and presented. In the model, capacitances of all interfaces are included. Special segment of this model is carrier's mobility model. Modeling of carrier's mobility is exposed. Two different carriers' mobility models are presented: analytical model that is developed and proposed and empirical model that is introduced. All models are modular and relatively simple. The results obtained by using proposed models are in very good agreement with already known ones.", publisher = "National Institute of Optoelectronics", journal = "Journal of Optoelectronics and Advanced Materials", title = "Modeling of carriers mobility impact on CNT FIET current-voltage characteristics", pages = "1424-1418", number = "11-12", volume = "16", url = "https://hdl.handle.net/21.15107/rcub_technorep_2564" }
Lukić, P.,& Šašić, R. M.. (2014). Modeling of carriers mobility impact on CNT FIET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials National Institute of Optoelectronics., 16(11-12), 1418-1424. https://hdl.handle.net/21.15107/rcub_technorep_2564
Lukić P, Šašić RM. Modeling of carriers mobility impact on CNT FIET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials. 2014;16(11-12):1418-1424. https://hdl.handle.net/21.15107/rcub_technorep_2564 .
Lukić, Petar, Šašić, Rajko M., "Modeling of carriers mobility impact on CNT FIET current-voltage characteristics" in Journal of Optoelectronics and Advanced Materials, 16, no. 11-12 (2014):1418-1424, https://hdl.handle.net/21.15107/rcub_technorep_2564 .