Frequency noise level of as ion implanted TiN-Ti-Si structures
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1996
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This paper presents a possibility of using frequency noise level measurements to study the properties of Ti silicides. We have sputter deposited sequentially a 100 nm thick titanium layer and a 50 nm TiN layer on p-type Si (111) wafers. The TiN/Ti/Si structures were implanted with As+ at 350 keV, to doses from 1 X 10(15) to 1 X 10(16) ions/cm(2). The projected range of arsenic ions is near Si-Ti interface. The samples were annealed in vacuum at temperatures up to 800 degrees C. Methods of characterization of samples include frequency noise level measurements, Rutherford backscattering, and electrical measurements. Annealing induce the Ti-Si reaction, the top TiN layer remaining stable throughout the processing. Silicidation depends on the annealing time and temperature, and on the implanted dose. In samples implanted up to 5 X 10(15) ions/cm(2) the low resistivity TiSi phase is formed at 750 degrees C. For higher implanted doses silicidation is retarded. In this case TiSi is formed ini...tially, transforming to the TiSi phase for longer annealing times. Noise spectra show that the noise level depend on the implanted As dose, and that for some frequencies, the implanted samples have higher noise level compared to the unimplanted samples.
Izvor:
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Ato, 1996, 115, 1-4, 554-556Izdavač:
- Elsevier, Amsterdam
DOI: 10.1016/0168-583X(95)01533-7
ISSN: 0168-583X
WoS: A1996VC42500123
Scopus: 2-s2.0-0030564489
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Mašinski fakultetTY - JOUR AU - Stojanović, M AU - Jeynes, C AU - Bibić, N AU - Milosavljević, Mirko AU - Vasić, Aleksandra AU - Milošević, Z PY - 1996 UR - https://machinery.mas.bg.ac.rs/handle/123456789/138 AB - This paper presents a possibility of using frequency noise level measurements to study the properties of Ti silicides. We have sputter deposited sequentially a 100 nm thick titanium layer and a 50 nm TiN layer on p-type Si (111) wafers. The TiN/Ti/Si structures were implanted with As+ at 350 keV, to doses from 1 X 10(15) to 1 X 10(16) ions/cm(2). The projected range of arsenic ions is near Si-Ti interface. The samples were annealed in vacuum at temperatures up to 800 degrees C. Methods of characterization of samples include frequency noise level measurements, Rutherford backscattering, and electrical measurements. Annealing induce the Ti-Si reaction, the top TiN layer remaining stable throughout the processing. Silicidation depends on the annealing time and temperature, and on the implanted dose. In samples implanted up to 5 X 10(15) ions/cm(2) the low resistivity TiSi phase is formed at 750 degrees C. For higher implanted doses silicidation is retarded. In this case TiSi is formed initially, transforming to the TiSi phase for longer annealing times. Noise spectra show that the noise level depend on the implanted As dose, and that for some frequencies, the implanted samples have higher noise level compared to the unimplanted samples. PB - Elsevier, Amsterdam T2 - Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Ato T1 - Frequency noise level of as ion implanted TiN-Ti-Si structures EP - 556 IS - 1-4 SP - 554 VL - 115 DO - 10.1016/0168-583X(95)01533-7 ER -
@article{ author = "Stojanović, M and Jeynes, C and Bibić, N and Milosavljević, Mirko and Vasić, Aleksandra and Milošević, Z", year = "1996", abstract = "This paper presents a possibility of using frequency noise level measurements to study the properties of Ti silicides. We have sputter deposited sequentially a 100 nm thick titanium layer and a 50 nm TiN layer on p-type Si (111) wafers. The TiN/Ti/Si structures were implanted with As+ at 350 keV, to doses from 1 X 10(15) to 1 X 10(16) ions/cm(2). The projected range of arsenic ions is near Si-Ti interface. The samples were annealed in vacuum at temperatures up to 800 degrees C. Methods of characterization of samples include frequency noise level measurements, Rutherford backscattering, and electrical measurements. Annealing induce the Ti-Si reaction, the top TiN layer remaining stable throughout the processing. Silicidation depends on the annealing time and temperature, and on the implanted dose. In samples implanted up to 5 X 10(15) ions/cm(2) the low resistivity TiSi phase is formed at 750 degrees C. For higher implanted doses silicidation is retarded. In this case TiSi is formed initially, transforming to the TiSi phase for longer annealing times. Noise spectra show that the noise level depend on the implanted As dose, and that for some frequencies, the implanted samples have higher noise level compared to the unimplanted samples.", publisher = "Elsevier, Amsterdam", journal = "Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Ato", title = "Frequency noise level of as ion implanted TiN-Ti-Si structures", pages = "556-554", number = "1-4", volume = "115", doi = "10.1016/0168-583X(95)01533-7" }
Stojanović, M., Jeynes, C., Bibić, N., Milosavljević, M., Vasić, A.,& Milošević, Z.. (1996). Frequency noise level of as ion implanted TiN-Ti-Si structures. in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Ato Elsevier, Amsterdam., 115(1-4), 554-556. https://doi.org/10.1016/0168-583X(95)01533-7
Stojanović M, Jeynes C, Bibić N, Milosavljević M, Vasić A, Milošević Z. Frequency noise level of as ion implanted TiN-Ti-Si structures. in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Ato. 1996;115(1-4):554-556. doi:10.1016/0168-583X(95)01533-7 .
Stojanović, M, Jeynes, C, Bibić, N, Milosavljević, Mirko, Vasić, Aleksandra, Milošević, Z, "Frequency noise level of as ion implanted TiN-Ti-Si structures" in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Ato, 115, no. 1-4 (1996):554-556, https://doi.org/10.1016/0168-583X(95)01533-7 . .