Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics
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2011
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This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ...ones..
Ključne reči:
SIC DIMOSFET / Drift region voltage / Analytical modelIzvor:
Optoelectronics and Advanced Materials-Rapid Communications, 2011, 5, 5-6, 551-554Izdavač:
- Natl Inst Optoelectronics, Bucharest-Magurele
Finansiranje / projekti:
- Optoelektronski nanodimenzioni sistemi - put ka primeni (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45003)
- Zajednička istraživanja merenja i uticaja jonizujućeg i UV zračenja u oblasti medicine i zaštite životne sredine (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-43011)
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Institucija/grupa
Mašinski fakultetTY - JOUR AU - Lukić, Petar AU - Šašić, Rajko M. AU - Lončar, B. B. AU - Žunjić, Aleksandar PY - 2011 UR - https://machinery.mas.bg.ac.rs/handle/123456789/1167 AB - This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones.. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Optoelectronics and Advanced Materials-Rapid Communications T1 - Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics EP - 554 IS - 5-6 SP - 551 VL - 5 UR - https://hdl.handle.net/21.15107/rcub_technorep_1945 ER -
@article{ author = "Lukić, Petar and Šašić, Rajko M. and Lončar, B. B. and Žunjić, Aleksandar", year = "2011", abstract = "This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones..", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Optoelectronics and Advanced Materials-Rapid Communications", title = "Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics", pages = "554-551", number = "5-6", volume = "5", url = "https://hdl.handle.net/21.15107/rcub_technorep_1945" }
Lukić, P., Šašić, R. M., Lončar, B. B.,& Žunjić, A.. (2011). Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics. in Optoelectronics and Advanced Materials-Rapid Communications Natl Inst Optoelectronics, Bucharest-Magurele., 5(5-6), 551-554. https://hdl.handle.net/21.15107/rcub_technorep_1945
Lukić P, Šašić RM, Lončar BB, Žunjić A. Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics. in Optoelectronics and Advanced Materials-Rapid Communications. 2011;5(5-6):551-554. https://hdl.handle.net/21.15107/rcub_technorep_1945 .
Lukić, Petar, Šašić, Rajko M., Lončar, B. B., Žunjić, Aleksandar, "Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics" in Optoelectronics and Advanced Materials-Rapid Communications, 5, no. 5-6 (2011):551-554, https://hdl.handle.net/21.15107/rcub_technorep_1945 .