An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs

dc.creator	Alkoash, Abed Alkhem
dc.creator	Šašić, Rajko M.
dc.creator	Ostojić, Stanko M.
dc.creator	Lukić, Petar
dc.date.accessioned	2022-09-19T16:34:00Z
dc.date.available	2022-09-19T16:34:00Z
dc.date.issued	2011
dc.identifier.issn	1546-1955
dc.identifier.uri	https://machinery.mas.bg.ac.rs/handle/123456789/1153
dc.description.abstract	The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.	en
dc.publisher	Amer Scientific Publishers, Stevenson Ranch
dc.relation	Ministry of Science and Technological Development
dc.rights	restrictedAccess
dc.source	Journal of Computational and Theoretical Nanoscience
dc.subject	Surrounding-Gate MOSFET	en
dc.subject	Mobility Degradation	en
dc.subject	I-V Analytical Model	en
dc.title	An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs	en
dc.type	article
dc.rights.license	ARR
dc.citation.epage	50
dc.citation.issue	1
dc.citation.other	8(1): 47-50
dc.citation.rank	M23
dc.citation.spage	47
dc.citation.volume	8
dc.identifier.doi	10.1166/jctn.2011.1657
dc.identifier.scopus	2-s2.0-84856923235
dc.identifier.wos	000289698000009
dc.type.version	publishedVersion