The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
Апстракт
The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.
Кључне речи:
Transport equation / Surrounding-gate MOSFET / Spatial carriers distribution / Quantum effects / Analytical modelИзвор:
Journal of Optoelectronics and Advanced Materials, 2010, 12, 5, 1161-1164Издавач:
- Natl Inst Optoelectronics, Bucharest-Magurele
Финансирање / пројекти:
- Ministry of Science and Technological Development
Колекције
Институција/група
Mašinski fakultetTY - JOUR AU - Šašić, Rajko M. AU - Lukić, Petar AU - Ostojić, Stanko M. AU - Alkoash, Abed Alkhem PY - 2010 UR - https://machinery.mas.bg.ac.rs/handle/123456789/1104 AB - The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Journal of Optoelectronics and Advanced Materials T1 - The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs EP - 1164 IS - 5 SP - 1161 VL - 12 UR - https://hdl.handle.net/21.15107/rcub_technorep_1581 ER -
@article{ author = "Šašić, Rajko M. and Lukić, Petar and Ostojić, Stanko M. and Alkoash, Abed Alkhem", year = "2010", abstract = "The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Journal of Optoelectronics and Advanced Materials", title = "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs", pages = "1164-1161", number = "5", volume = "12", url = "https://hdl.handle.net/21.15107/rcub_technorep_1581" }
Šašić, R. M., Lukić, P., Ostojić, S. M.,& Alkoash, A. A.. (2010). The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials Natl Inst Optoelectronics, Bucharest-Magurele., 12(5), 1161-1164. https://hdl.handle.net/21.15107/rcub_technorep_1581
Šašić RM, Lukić P, Ostojić SM, Alkoash AA. The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials. 2010;12(5):1161-1164. https://hdl.handle.net/21.15107/rcub_technorep_1581 .
Šašić, Rajko M., Lukić, Petar, Ostojić, Stanko M., Alkoash, Abed Alkhem, "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs" in Journal of Optoelectronics and Advanced Materials, 12, no. 5 (2010):1161-1164, https://hdl.handle.net/21.15107/rcub_technorep_1581 .