Analytical model of a Si TFT with cylindrical source and drain
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2008
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In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.
Izvor:
2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings, 2008, 193-+Izdavač:
- IEEE, New York
DOI: 10.1109/ICMEL.2008.4559256
ISSN: 2159-1660
WoS: 000257432600039
Scopus: 2-s2.0-51749124483
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Institucija/grupa
Mašinski fakultetTY - CONF AU - Ramović, Rifat M. AU - Lukić, Petar AU - Šašić, Rajko M. AU - Ostojić, Stanko M. PY - 2008 UR - https://machinery.mas.bg.ac.rs/handle/123456789/851 AB - In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it. PB - IEEE, New York C3 - 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings T1 - Analytical model of a Si TFT with cylindrical source and drain EP - + SP - 193 DO - 10.1109/ICMEL.2008.4559256 ER -
@conference{ author = "Ramović, Rifat M. and Lukić, Petar and Šašić, Rajko M. and Ostojić, Stanko M.", year = "2008", abstract = "In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.", publisher = "IEEE, New York", journal = "2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings", title = "Analytical model of a Si TFT with cylindrical source and drain", pages = "+-193", doi = "10.1109/ICMEL.2008.4559256" }
Ramović, R. M., Lukić, P., Šašić, R. M.,& Ostojić, S. M.. (2008). Analytical model of a Si TFT with cylindrical source and drain. in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings IEEE, New York., 193-+. https://doi.org/10.1109/ICMEL.2008.4559256
Ramović RM, Lukić P, Šašić RM, Ostojić SM. Analytical model of a Si TFT with cylindrical source and drain. in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings. 2008;:193-+. doi:10.1109/ICMEL.2008.4559256 .
Ramović, Rifat M., Lukić, Petar, Šašić, Rajko M., Ostojić, Stanko M., "Analytical model of a Si TFT with cylindrical source and drain" in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings (2008):193-+, https://doi.org/10.1109/ICMEL.2008.4559256 . .