Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters
Само за регистроване кориснике
2006
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.
Кључне речи:
PENELOPE / MOSFET / Monte Carlo method / gamma radiation / FOTELPИзвор:
Ieee Transactions on Plasma Science, 2006, 34, 5, 1715-1718Издавач:
- Ieee-Inst Electrical Electronics Engineers Inc, Piscataway
Финансирање / пројекти:
- Физика електромагнетне и радијационе компатабилности електротехничких материјала и компонената (RS-MESTD-MPN2006-2010-141046)
DOI: 10.1109/TPS.2006.883327
ISSN: 0093-3813
WoS: 000241439700016
Scopus: 2-s2.0-33750395610
Колекције
Институција/група
Mašinski fakultetTY - JOUR AU - Stanković, Srboljub J. AU - Ilić, Radovan D. AU - Osmokrović, Predrag AU - Lončar, Boris AU - Vasić, Aleksandra PY - 2006 UR - https://machinery.mas.bg.ac.rs/handle/123456789/613 AB - The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials. PB - Ieee-Inst Electrical Electronics Engineers Inc, Piscataway T2 - Ieee Transactions on Plasma Science T1 - Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters EP - 1718 IS - 5 SP - 1715 VL - 34 DO - 10.1109/TPS.2006.883327 ER -
@article{ author = "Stanković, Srboljub J. and Ilić, Radovan D. and Osmokrović, Predrag and Lončar, Boris and Vasić, Aleksandra", year = "2006", abstract = "The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.", publisher = "Ieee-Inst Electrical Electronics Engineers Inc, Piscataway", journal = "Ieee Transactions on Plasma Science", title = "Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters", pages = "1718-1715", number = "5", volume = "34", doi = "10.1109/TPS.2006.883327" }
Stanković, S. J., Ilić, R. D., Osmokrović, P., Lončar, B.,& Vasić, A.. (2006). Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters. in Ieee Transactions on Plasma Science Ieee-Inst Electrical Electronics Engineers Inc, Piscataway., 34(5), 1715-1718. https://doi.org/10.1109/TPS.2006.883327
Stanković SJ, Ilić RD, Osmokrović P, Lončar B, Vasić A. Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters. in Ieee Transactions on Plasma Science. 2006;34(5):1715-1718. doi:10.1109/TPS.2006.883327 .
Stanković, Srboljub J., Ilić, Radovan D., Osmokrović, Predrag, Lončar, Boris, Vasić, Aleksandra, "Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters" in Ieee Transactions on Plasma Science, 34, no. 5 (2006):1715-1718, https://doi.org/10.1109/TPS.2006.883327 . .