Ho2O3 additive effects on BaTiO3 ceramics microstructure and dielectric properties
Apstrakt
Dopirana BaTiO3 keramika je našla veliku primenu za dobijanje PTCR otpornika, višeslojnih keramičkih kondenzatora i temperaturnih senzora. U radu ispitivane su mikrostrukturne i dielektrične karakteristike Ho dopirane BaTiO3 keramike. Koncentracija aditiva, Ho2O3, kretala se od 0.01 do 1.0wt%. Uzorci dopirane BaTiO3 keramike dobijeni su konvencionalnom metodom sinterivanja u čvrstoj fazi i sinterovani na 1320°C i 1380°C u trajanju od 4h. Veličina zrna i mikrostrukturne karakteristike različitih uzoraka kao i njihov fazni sastav ispitivani su SEM i EDS analizom. SEM analiza Ho/BaTiO3 dopirane keramike pokazala je da je za uzorke dopirane nižom koncentracijom aditiva karakteristična homogena mikrostruktura sa veličinom zrna od 20-30μm. Za uzorke dopirane višom koncentracijom aditiva karakteristična veličina zrna kretala se od 2-10μm. Dielektrične karakteristike merene su u temperaturnom intervalu 20-180°C. Za uzorke dopirane niskom koncentracijom aditiva (0.01 wt%) i sinterovane na 1380°...C karakteristična je visoka vrednost dielektrične konstante (ε r=2400) na sobnoj temperaturi. Relativno mala promena dielektrične konstante sa temperaturom karakteristična je za uzorke dopirane visokom koncentracijom aditiva. Korišćenjem Kiri-Vajsovog i modifikovanog Kiri-Vajsovog zakona izračunati se Kirijeva konstanta (S), Kirijeva temperatura (Tc) i kritični eksponent nelinearnosti (γ). Dobijeni rezultati za γ pokazuju da je za sve ispitivane uzorke karakterističan oštar fazni prelaz.
Doped BaTiO3-ceramics is very interesting for their application as PTCR resistors, multilayer ceramic capacitors, thermal sensors etc. Ho doped BaTiO3 ceramics, with different Ho2O3 content, ranging from 0.01 to 1.0 wt% Ho, were investigated regarding their microstructural and dielectric characteristics. The samples were prepared by the conventional solid state reaction and sintered at 1320° and 1380°C in an air atmosphere for 4 hours. The grain size and microstructure characteristics for various samples and their phase composition was carried out using a scanning electron microscope (SEM) equipped with EDS system. SEM analysis of Ho/BaTiO3 doped ceramics showed that in samples doped with a rare-earth ions low level, the grain size ranged from 20-30μm, while with the higher dopant concentration the abnormal grain growth is inhibited and the grain size ranged between 2- 10μm. Dielectric measurements were carried out as a function of temperature up to 180°C. The low doped samples sintere...d at 1380°C, display the high value of dielectric permittivity at room temperature, 2400 for 0.01Ho/BaTiO3. A nearly flat permittivity-response was obtained in specimens with higher additive content. Using a Curie-Weiss low and modified Curie-Weiss low the Curie constant (C), Curie temperature (Tc) and a critical exponent of nonlinearity (γ) were calculated. The obtained value of γ pointed out that the specimens have almost sharp phase transition.
Ključne reči:
sinterovanje / mikrostruktura / dielektrične karakteristike / BaTiO3 / aditivi / sintering / microstructure / dielectric properties / BaTiO3 / additiveIzvor:
Science of Sintering, 2012, 44, 2, 223-233Izdavač:
- Međunarodni Institut za nauku o sinterovanju, Beograd
Finansiranje / projekti:
- Usmerena sinteza, struktura i svojstva multifunkcionalnih materijala (RS-MESTD-Basic Research (BR or ON)-172057)
DOI: 10.2298/SOS1202223P
ISSN: 0350-820X
WoS: 000318148600010
Scopus: 2-s2.0-84866404412
Kolekcije
Institucija/grupa
Mašinski fakultetTY - JOUR AU - Paunović, Vesna AU - Mitić, Vojislav V. AU - Miljković, Miroslav AU - Pavlović, Vera P. AU - Živković, Ljiljana PY - 2012 UR - https://machinery.mas.bg.ac.rs/handle/123456789/1445 AB - Dopirana BaTiO3 keramika je našla veliku primenu za dobijanje PTCR otpornika, višeslojnih keramičkih kondenzatora i temperaturnih senzora. U radu ispitivane su mikrostrukturne i dielektrične karakteristike Ho dopirane BaTiO3 keramike. Koncentracija aditiva, Ho2O3, kretala se od 0.01 do 1.0wt%. Uzorci dopirane BaTiO3 keramike dobijeni su konvencionalnom metodom sinterivanja u čvrstoj fazi i sinterovani na 1320°C i 1380°C u trajanju od 4h. Veličina zrna i mikrostrukturne karakteristike različitih uzoraka kao i njihov fazni sastav ispitivani su SEM i EDS analizom. SEM analiza Ho/BaTiO3 dopirane keramike pokazala je da je za uzorke dopirane nižom koncentracijom aditiva karakteristična homogena mikrostruktura sa veličinom zrna od 20-30μm. Za uzorke dopirane višom koncentracijom aditiva karakteristična veličina zrna kretala se od 2-10μm. Dielektrične karakteristike merene su u temperaturnom intervalu 20-180°C. Za uzorke dopirane niskom koncentracijom aditiva (0.01 wt%) i sinterovane na 1380°C karakteristična je visoka vrednost dielektrične konstante (ε r=2400) na sobnoj temperaturi. Relativno mala promena dielektrične konstante sa temperaturom karakteristična je za uzorke dopirane visokom koncentracijom aditiva. Korišćenjem Kiri-Vajsovog i modifikovanog Kiri-Vajsovog zakona izračunati se Kirijeva konstanta (S), Kirijeva temperatura (Tc) i kritični eksponent nelinearnosti (γ). Dobijeni rezultati za γ pokazuju da je za sve ispitivane uzorke karakterističan oštar fazni prelaz. AB - Doped BaTiO3-ceramics is very interesting for their application as PTCR resistors, multilayer ceramic capacitors, thermal sensors etc. Ho doped BaTiO3 ceramics, with different Ho2O3 content, ranging from 0.01 to 1.0 wt% Ho, were investigated regarding their microstructural and dielectric characteristics. The samples were prepared by the conventional solid state reaction and sintered at 1320° and 1380°C in an air atmosphere for 4 hours. The grain size and microstructure characteristics for various samples and their phase composition was carried out using a scanning electron microscope (SEM) equipped with EDS system. SEM analysis of Ho/BaTiO3 doped ceramics showed that in samples doped with a rare-earth ions low level, the grain size ranged from 20-30μm, while with the higher dopant concentration the abnormal grain growth is inhibited and the grain size ranged between 2- 10μm. Dielectric measurements were carried out as a function of temperature up to 180°C. The low doped samples sintered at 1380°C, display the high value of dielectric permittivity at room temperature, 2400 for 0.01Ho/BaTiO3. A nearly flat permittivity-response was obtained in specimens with higher additive content. Using a Curie-Weiss low and modified Curie-Weiss low the Curie constant (C), Curie temperature (Tc) and a critical exponent of nonlinearity (γ) were calculated. The obtained value of γ pointed out that the specimens have almost sharp phase transition. PB - Međunarodni Institut za nauku o sinterovanju, Beograd T2 - Science of Sintering T1 - Ho2O3 additive effects on BaTiO3 ceramics microstructure and dielectric properties EP - 233 IS - 2 SP - 223 VL - 44 DO - 10.2298/SOS1202223P ER -
@article{ author = "Paunović, Vesna and Mitić, Vojislav V. and Miljković, Miroslav and Pavlović, Vera P. and Živković, Ljiljana", year = "2012", abstract = "Dopirana BaTiO3 keramika je našla veliku primenu za dobijanje PTCR otpornika, višeslojnih keramičkih kondenzatora i temperaturnih senzora. U radu ispitivane su mikrostrukturne i dielektrične karakteristike Ho dopirane BaTiO3 keramike. Koncentracija aditiva, Ho2O3, kretala se od 0.01 do 1.0wt%. Uzorci dopirane BaTiO3 keramike dobijeni su konvencionalnom metodom sinterivanja u čvrstoj fazi i sinterovani na 1320°C i 1380°C u trajanju od 4h. Veličina zrna i mikrostrukturne karakteristike različitih uzoraka kao i njihov fazni sastav ispitivani su SEM i EDS analizom. SEM analiza Ho/BaTiO3 dopirane keramike pokazala je da je za uzorke dopirane nižom koncentracijom aditiva karakteristična homogena mikrostruktura sa veličinom zrna od 20-30μm. Za uzorke dopirane višom koncentracijom aditiva karakteristična veličina zrna kretala se od 2-10μm. Dielektrične karakteristike merene su u temperaturnom intervalu 20-180°C. Za uzorke dopirane niskom koncentracijom aditiva (0.01 wt%) i sinterovane na 1380°C karakteristična je visoka vrednost dielektrične konstante (ε r=2400) na sobnoj temperaturi. Relativno mala promena dielektrične konstante sa temperaturom karakteristična je za uzorke dopirane visokom koncentracijom aditiva. Korišćenjem Kiri-Vajsovog i modifikovanog Kiri-Vajsovog zakona izračunati se Kirijeva konstanta (S), Kirijeva temperatura (Tc) i kritični eksponent nelinearnosti (γ). Dobijeni rezultati za γ pokazuju da je za sve ispitivane uzorke karakterističan oštar fazni prelaz., Doped BaTiO3-ceramics is very interesting for their application as PTCR resistors, multilayer ceramic capacitors, thermal sensors etc. Ho doped BaTiO3 ceramics, with different Ho2O3 content, ranging from 0.01 to 1.0 wt% Ho, were investigated regarding their microstructural and dielectric characteristics. The samples were prepared by the conventional solid state reaction and sintered at 1320° and 1380°C in an air atmosphere for 4 hours. The grain size and microstructure characteristics for various samples and their phase composition was carried out using a scanning electron microscope (SEM) equipped with EDS system. SEM analysis of Ho/BaTiO3 doped ceramics showed that in samples doped with a rare-earth ions low level, the grain size ranged from 20-30μm, while with the higher dopant concentration the abnormal grain growth is inhibited and the grain size ranged between 2- 10μm. Dielectric measurements were carried out as a function of temperature up to 180°C. The low doped samples sintered at 1380°C, display the high value of dielectric permittivity at room temperature, 2400 for 0.01Ho/BaTiO3. A nearly flat permittivity-response was obtained in specimens with higher additive content. Using a Curie-Weiss low and modified Curie-Weiss low the Curie constant (C), Curie temperature (Tc) and a critical exponent of nonlinearity (γ) were calculated. The obtained value of γ pointed out that the specimens have almost sharp phase transition.", publisher = "Međunarodni Institut za nauku o sinterovanju, Beograd", journal = "Science of Sintering", title = "Ho2O3 additive effects on BaTiO3 ceramics microstructure and dielectric properties", pages = "233-223", number = "2", volume = "44", doi = "10.2298/SOS1202223P" }
Paunović, V., Mitić, V. V., Miljković, M., Pavlović, V. P.,& Živković, L.. (2012). Ho2O3 additive effects on BaTiO3 ceramics microstructure and dielectric properties. in Science of Sintering Međunarodni Institut za nauku o sinterovanju, Beograd., 44(2), 223-233. https://doi.org/10.2298/SOS1202223P
Paunović V, Mitić VV, Miljković M, Pavlović VP, Živković L. Ho2O3 additive effects on BaTiO3 ceramics microstructure and dielectric properties. in Science of Sintering. 2012;44(2):223-233. doi:10.2298/SOS1202223P .
Paunović, Vesna, Mitić, Vojislav V., Miljković, Miroslav, Pavlović, Vera P., Živković, Ljiljana, "Ho2O3 additive effects on BaTiO3 ceramics microstructure and dielectric properties" in Science of Sintering, 44, no. 2 (2012):223-233, https://doi.org/10.2298/SOS1202223P . .