Prikaz osnovnih podataka o dokumentu
Analytical model of CNT FET current-voltage characteristics
dc.creator | Vasić, Dušan B. | |
dc.creator | Lukić, Petar | |
dc.creator | Lukić, Vladan M. | |
dc.creator | Šašić, Rajko M. | |
dc.date.accessioned | 2022-09-19T16:47:54Z | |
dc.date.available | 2022-09-19T16:47:54Z | |
dc.date.issued | 2012 | |
dc.identifier.issn | 1454-4164 | |
dc.identifier.uri | https://machinery.mas.bg.ac.rs/handle/123456789/1356 | |
dc.description.abstract | In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones. | en |
dc.publisher | Natl Inst Optoelectronics, Bucharest-Magurele | |
dc.rights | restrictedAccess | |
dc.source | Journal of Optoelectronics and Advanced Materials | |
dc.subject | Current - voltage characteristics | en |
dc.subject | CNT FET | en |
dc.subject | Analytical model | en |
dc.title | Analytical model of CNT FET current-voltage characteristics | en |
dc.type | article | |
dc.rights.license | ARR | |
dc.citation.epage | 182 | |
dc.citation.issue | 1-2 | |
dc.citation.other | 14(1-2): 176-182 | |
dc.citation.rank | M23 | |
dc.citation.spage | 176 | |
dc.citation.volume | 14 | |
dc.identifier.rcub | https://hdl.handle.net/21.15107/rcub_technorep_1980 | |
dc.identifier.scopus | 2-s2.0-84860431520 | |
dc.identifier.wos | 000302579300028 | |
dc.type.version | publishedVersion |